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参数资料
| 型号： | ICTE-12 |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-201AD |
| 文件页数： | 2/2页 |
| 文件大小： | 153K |
| 代理商： | ICTE-12 |
1
s
0.1
1.0
10
100
1.0
s
1.0ms
10
s
10ms
100
s
td Pulse Width, sec.
Pppm
Peak
Pulse
Power
(Pp)
in
kW
1
100
1000
10,000
100,000
10
20
50
2
5
100 200
V(BR), Breakdown Voltage, Volts
C
junction
capacitance,
pF
TJ=25°C
f = 1.0 MHZ
Vsig= 50mVp-p
Measured at
Stand-Off
Voltage (VR)
Measured at
Zero Bias
Figure 1 - Peak Pulse Power Rating Curve
Figure 2 - Typical Junction Capacitance
All products are sold to the commercial specifications shown, for any additional reliability testing or extended parameters, please consult the factory.
contact semitron on: telephone: +44 (0)1793 724000 fax: +44 (0)1793 720401
29
Voltage
Packaging Option
B = Bulk (500 pcs)
T = Tape & reeled (1500 pcs)
Bi Directional
ICTE or MPTE
C
ORDERING INFORMATION
ICTE/MPTE series
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ICTE12/1 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1.5KW 12V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| ICTE12/4 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1.5KW 12V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| ICTE12/54 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1.5KW 12V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| ICTE-12/MPTE-12 | 制造商:LITTELFUSE 制造商全称:Littelfuse 功能描述:Silicon Avalanche Diodes - 1500 Watt Axial Leaded Transient Voltage Suppressors |
| ICTE12/TR12 | 制造商:Microsemi Corporation 功能描述:ICTE12/TR12 - Tape and Reel |
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