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参数资料
| 型号： | ICTE-15C |
| 厂商： | Electronic Theatre Controls, Inc. |
| 元件分类： | TVS-瞬态抑制二极管 |
| 英文描述： | TRANSIENT VOLTAGE SUPPRESSORS FOR MICROPROCESSOR PROTECTION |
| 中文描述： | 瞬态电压抑制器微机保护 |
| 文件页数： | 2/4页 |
| 文件大小： | 43K |
| 代理商： | ICTE-15C |
ELECTRICAL CHARACTERISTICS at 25
°
C (JEDEC REGISTERED DATA) TABLE 1
MINIMUM
(3)
BREAKDOWN
VOLTAGE
at 1.0mA.
V
(BR)
(VOLTS)
MAXIMUM
REVERSE
LEAKAGE
at V
WM
I
D
(
μ
A)
MAXIMUM
CLAMPING
VOLTAGE
at l
PP
= 1.0A
Vc
(VOLTS)
MAXIMUM
CLAMPING
VOLTAGE
at l
PP
= 10A
Vc
(VOLTS)
MAXIMUM
PEAK
PULSE
CURRENT
I
PP
(Amps)
STAND-OFF
VOLTAGE
GENERAL
SEMICONDUCTOR
PART
NUMBER
JEDEC
TYPE
NUMBER
V
WM
(VOLTS)
1N6373
(2)
ICTE-5
(2)
5.0
6.0
300
7.1
7.5
160
1N6374
ICTE-8
8.0
9.4
25.0
11.3
11.5
100
1N6375
ICTE-10
10.0
11.7
2.0
13.7
14.1
90
1N6376
ICTE-12
12.0
14.1
2.0
16.1
16.5
70
1N6377
ICTE-15
15.0
17.6
2.0
20.1
20.6
60
ELECTRICAL CHARACTERISTICS AT 25
°
C (JEDEC REGISTERED DATA) TABLE 2
MINIMUM
(3)
BREAKDOWN
VOLTAGE
at 1.0mA.
V
(BR)
(VOLTS)
MAXIMUM
REVERSE
LEAKAGE
at V
WM
I
D
(
μ
A)
MAXIMUM
CLAMPING
VOLTAGE
at l
PP
= 1A
Vc
(VOLTS)
MAXIMUM
CLAMPING
VOLTAGE
at l
PP
= 10A
Vc
(VOLTS)
MAXIMUM
PEAK
PULSE
CURRENT
I
PP
(Amps)
STAND-OFF
VOLTAGE
GENERAL
SEMICONDUCTOR
PART
NUMBER
JEDEC
TYPE
NUMBER
V
WM
(VOLTS)
1N6382
ICTE-8C
8.0
9.4
50.0
11.4
11.6
100
1N6383
ICTE-10C
10.0
11.7
2.0
14.1
14.5
90
1N6384
ICTE-12C
12.0
14.1
2.0
16.7
17.1
70
1N6385
ICTE-15C
15.0
17.6
2.0
20.8
21.4
60
NOTES:
(1) “ C “ Suffix indicates bi-directional
(2) ICTE-5 and 1N6373 are not available as bi-directional
(3) The minimum breakdown voltage as shown takes into consideration the ±1 Volt tolerance normally specified for power supply regulation on most integrated circuit
manufacturers data sheets. Please consult factory for devices that require reduced clamping voltages where tighter regulated power supply voltages are employed.
(4) Clamping Factor: 1.33 at full lo rated power; 1.20 at 50% rated power; Clamping Factor: the ratio of the actual Vc (Clamping Voltage) to the V
(BR)
(Breakdown Voltage)
as measured on a specific device.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ICTE15C/1 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1.5KW 15V Bidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| ICTE15C/4 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1.5KW 15V Bidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| ICTE15C/54 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1.5KW 15V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| ICTE-15C/MPTE-15C | 制造商:LITTELFUSE 制造商全称:Littelfuse 功能描述:Silicon Avalanche Diodes - 1500 Watt Axial Leaded Transient Voltage Suppressors |
| ICTE15C/TR12 | 制造商:Microsemi Corporation 功能描述:ICTE15C/TR12 - Tape and Reel |
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