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参数资料
| 型号： | IDL620 |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | Optocoupler, Phototransistor Output, AC Input (Dual, Quad Channel) |
| 中文描述： | 光耦，光电晶体管输出，AC输入（双通道，四通道） |
| 文件页数： | 2/9页 |
| 文件大小： | 173K |
| 代理商： | IDL620 |
www.vishay.com
2
Document Number 83653
Rev. 1.3, 26-Apr-04
VISHAY
ILD620/ 620GB / ILQ620/ 620GB
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Output
Coupler
Parameter
Test condition
Symbol
Value
Unit
Forward current
IF
± 60
mA
Surge current
IFSM
± 1.5
A
Power dissipation
Pdiss
100
mW
Derate linearly from 25 °C
1.3
mW/°C
Parameter
Test condition
Symbol
Value
Unit
Collector-emitter breakdown
voltage
BVCEO
70
V
Collector current
IC
50
mA
t < 1.0 sec:
IC
100
mA
Power dissipation
Pdiss
150
mW
Derate from 25 °C
2.0
mW/°C
Parameter
Test condition
Part
Symbol
Value
Unit
Isolation test voltage
t = 1.0 sec.
VISO
5300
VRMS
Package dissipation
ILD620
400
mW
ILD620GB
400
mW
Derate from 25 °C
5.33
mW/°C
Package dissipation
ILQ620
500
mW
ILQ620GB
500
mW
Derate from 25 °C
6.67
mW/°C
Creepage
≥ 7.0
mm
Clearance
≥ 7.0
mm
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to + 100
°C
Junction temperature
Tj
100
°C
Soldering temperature
2.0 mm from case bottom
Tsld
260
°C
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