参数资料
型号: IDT06S60C
厂商: INFINEON TECHNOLOGIES AG
英文描述: 2nd generation thinQ! SiC Schottky Diode
中文描述: 第二代thinQ!碳化硅肖特基二极管
文件页数: 2/7页
文件大小: 246K
代理商: IDT06S60C
IDT06S60C
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
-
-
2.4
K/W
Thermal resistance,
junction - ambient
R
thJA
leaded
-
-
62
Soldering temperature, wave
soldering only allowed al leads
T
sold
1.6mm(0.063 in.) from
case for 10s
-
-
260
°C
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
DC blocking voltage
V
DC
I
R
=0.08 mA
600
-
-
V
Diode forward voltage
V
F
I
F
=6 A,
T
j
=25 °C
-
1.5
1.7
I
F
=6 A,
T
j
=150 °C
-
1.7
2.1
Reverse current
I
R
V
R
=600 V,
T
j
=25 °C
-
0.7
80
μA
V
R
=600 V,
T
j
=150 °C
-
3
800
AC characteristics
Total capacitive charge
Q
c
-
15
-
nC
Switching time
3)
t
c
-
-
<10
ns
Total capacitance
C
V
R
=1 V,
f
=1 MHz
-
280
-
pF
V
R
=300 V,
f
=1 MHz
-
35
-
V
R
=600 V,
f
=1 MHz
-
35
-
4)
Only capacitive charge occuring, guaranteed by design.
Values
V
R
=400 V,
I
F
I
F,max
,
d
i
F
/d
t
=200 A/μs,
T
j
=150 °C
3)
t
c
is the time constant for the capacitive displacement current waveform (independent from T
j
, I
LOAD
and
di/dt), different from t
rr
, which is dependent on T
j
, I
LOAD
, di/dt. No reverse recovery time constant t
rr
due to
absence of minority carrier injection.
1)
J-STD20 and JESD22
2)
All devices tested under avalanche conditions, for a time periode of 5ms at 5mA.
Rev. 2.0
page 2
2006-03-14
相关PDF资料
PDF描述
IDT08S60C 2nd Generation thinQ! SiC Schottky Diode
IDT12S60C 2nd Generation thinQ! SiC Schottky Diode
IDT77950 SwitchStarTM Reference Design Using the IDT77V400 Switching Memory and IDT77V500 Switch Controller
IDW100E60 Fast Switching EmCon Diode
IDW75E60 Fast Switching EmCon Diode
相关代理商/技术参数
参数描述
IDT06S60C_08 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:2nd generation thinQ SiC Schottky Diode
IDT06S60CXK 制造商:Infineon Technologies AG 功能描述:Diode Schottky 600V 6A 2-Pin(2+Tab) TO-220
IDT08S60C 功能描述:肖特基二极管与整流器 Schottky Diode Silicon Carbide RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
IDT08S60C_08 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:2nd Generation thinQ SiC Schottky Diode
IDT08S60CXK 制造商:Infineon Technologies AG 功能描述:Diode Schottky 600V 8A 2-Pin(2+Tab) TO-220 Tube