参数资料
型号: IDT6116SA15TPG
厂商: IDT, Integrated Device Technology Inc
文件页数: 7/11页
文件大小: 0K
描述: IC SRAM 16KBIT 15NS 24DIP
标准包装: 300
格式 - 存储器: RAM
存储器类型: SRAM - 异步
存储容量: 16K (2K x 8)
速度: 15ns
接口: 并联
电源电压: 4.5 V ~ 5.5 V
工作温度: 0°C ~ 70°C
封装/外壳: 24-DIP(0.300",7.62mm)
供应商设备封装: 24-PDIP
包装: 管件
其它名称: 6116SA15TPG
800-2603-5
IDT6116SA15TPG-ND
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit)
Timing Waveform of Read Cycle No. 1 (1,3)
t RC
ADDRESS
t AA
OE
t OE
Military, Commercial, and Industrial Temperature Ranges
t OH
t OHZ (5)
CS
t OLZ (5)
t ACS
t CHZ
(5)
DATA OUT
t CLZ
(5)
DATA
VALID
V CC
Supply
I CC
t PU
Currents
I SB
t PD
,
3089 drw 06
Timing Waveform of Read Cycle No. 2 (1,2,4)
t RC
ADDRESS
t OH
t AA
t OH
DATA OUT
PREVIOUS DATA VALID
DATA VALID
,
3089 drw 07
Timing Waveform of Read Cycle No. 3 (1,3,4)
CS
DATA OUT
t CLZ (5)
t ACS
t CHZ
DATA VALID
(5)
,
3089 drw 08
NOTES:
1. WE is HIGH for Read cycle.
2. Device is continously selected, CS is LOW.
3. Address valid prior to or coincident with CS transition LOW.
4. OE is LOW.
5. Transition is measured ±500mV from steady state.
7
6.42
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