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参数资料
| 型号： | IDT7005L35J8 |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 9/21页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 64KBIT 35NS 68PLCC |
| 标准包装： | 250 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 64K (8K x 8) |
| 速度： | 35ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 68-LCC（J 形引线） |
| 供应商设备封装： | 68-PLCC（24x24） |
| 包装： | 带卷 (TR) |
| 其它名称： | 7005L35J8 |
IDT7005S/L
High-Speed 8K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage (5)
7005X15
Com'l Only
7005X17
Com'l Only
7005X20
Com'l, Ind
& Military
7005X25
Com'l &
Military
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Unit
WRITE CYCLE
t WC
t EW
t AW
Write Cycle Time
Chip Enable to End-of-Write (3)
Address Valid to End-of-Write
15
12
12
____
____
____
17
12
12
____
____
____
20
15
15
____
____
____
25
20
20
____
____
____
ns
ns
ns
t AS
Address Set-up Time
(3)
0
____
0
____
0
____
0
____
ns
t WP
t WR
t DW
Write Pulse Width
Write Recovery Time
Data Valid to End-of-Write
12
0
10
____
____
____
12
0
10
____
____
____
15
0
15
____
____
____
20
0
15
____
____
____
ns
ns
ns
t HZ
Output High-Z Time
(1,2)
____
10
____
10
____
12
____
15
ns
t DH
Data Hold Time
(4)
0
____
0
____
0
____
0
____
ns
t WZ
t OW
t SWRD
t SPS
Write Enable to Output in High-Z (1,2)
Output Active from End-of-Write (1,2,4)
SEM Flag Write to Read Time
SEM Flag Contention Window
____
0
5
5
10
____
____
____
____
0
5
5
10
____
____
____
____
0
5
5
12
____
____
____
____
0
5
5
15
____
____
____
ns
ns
ns
ns
2738 tbl 14a
7005X35
Com'l, Ind
& Military
7005X55
Com'l, Ind
& Military
7005X70
Military Only
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
WRITE CYCLE
t WC
t EW
t AW
Write Cycle Time
Chip Enable to End-of-Write (3)
Address Valid to End-of-Write
35
30
30
____
____
____
55
45
45
____
____
____
70
50
50
____
____
____
ns
ns
ns
t AS
Address Set-up Time
(3)
0
____
0
____
0
____
ns
t WP
t WR
t DW
Write Pulse Width
Write Recovery Time
Data Valid to End-of-Write
25
0
15
____
____
____
40
0
30
____
____
____
50
0
40
____
____
____
ns
ns
ns
t HZ
Output High-Z Time
(1,2)
____
15
____
25
____
30
ns
t DH
Data Hold Time
(4)
0
____
0
____
0
____
ns
Write Enable to Output in High-Z
t WZ
t OW
t SWRD
t SPS
(1,2)
Output Active from End-of-Write (1,2,4)
SEM Flag Write to Read Time
SEM Flag Contention Window
____
0
5
5
15
____
____
____
____
0
5
5
25
____
____
____
____
0
5
5
30
____
____
____
ns
ns
ns
ns
NOTES:
2738 tbl 14b
1. Transition is measured 0mV from Low or High-impedance voltage with load (Figure 2).
2. This parameter is guaranteed by device characterization but is not production tested.
3. To access RAM, CE = V IL , SEM = V IH . To access semaphore, CE = V IH and SEM = V IL . Either condition must be valid for the entire t EW time.
4. The specification for t DH must be met by the device supplying write data to the RAM under all operating conditions. Although t DH and t OW values will vary over voltage
and temperature, the actual t DH will always be smaller than the actual t OW .
5. 'X' in part number indicates power rating (S or L).
9
6.42
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT7005L35JB | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM |
| IDT7005L35L68 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 Dual-Port SRAM |
| IDT7005L35PF | 功能描述:IC SRAM 64KBIT 35NS 64TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，异步 存储容量:128K（8K x 16） 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:70V25S15PF |
| IDT7005L35PF8 | 功能描述:IC SRAM 64KBIT 35NS 64TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:71V67703S75PFGI |
| IDT7005L35PFB | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM |
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