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参数资料
| 型号： | IDT7005S35PF8 |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 4/21页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 64KBIT 35NS 64TQFP |
| 标准包装： | 750 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 64K (8K x 8) |
| 速度： | 35ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 64-LQFP |
| 供应商设备封装： | 64-TQFP（14x14） |
| 包装： | 带卷 (TR) |
| 其它名称： | 7005S35PF8 |
IDT7005S/L
High-Speed 8K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Truth Table I: Non-Contention Read/Write Control
Inputs (1)
Outputs
CE
H
L
L
X
R/ W
X
L
H
X
OE
X
X
L
H
SEM
H
H
H
X
I/O 0-7
High-Z
DATA IN
DATA OUT
High-Z
Deselected: Power-Down
Write to Memory
Read Memory
Outputs Disabled
Mode
NOTE:
1. A 0L – A 12L is not equal to A 0R – A 12R
Truth Table II: Semaphore Read/Write Control (1)
2738 tbl 02
Inputs (1)
Outputs
CE
H
H
L
R/ W
H
↑
X
OE
L
X
X
SEM
L
L
L
I/O 0-7
DATA OUT
DATA IN
____
Read in Semaphore Flag Data Out
Write I/Oo into Semaphore Flag
Not Allowed
Mode
NOTE:
1. There are eight semaphore flags written to via I/O 0 and read from I/O 0 - I/O 7. These eight semaphores are addressed by A 0 - A 2.
2738 tbl 03
V TERM
Terminal Voltage
-0.5 to +7.0
-0.5 to +7.0
AbsoluteMaximumRatings (1)
Commercial
Symbol Rating & Industrial Military
(2)
with Respect to
GND
Unit
V
Maximum Operating Temperature
and Supply Voltage (1,2)
Ambient
Grade Temperature GND Vcc
Military -55 O C to+125 O C 0V 5.0V + 10%
0 C to +70 C
-40 C to +85 C
T BIAS
T STG
Temperature Under
Bias
Storage
Temperature
-55 to +125
-65 to +150
-65 to +135
-65 to +150
o
o
C
C
Commercial
Industrial
NOTES:
O O
O O
0V
OV
5.0V + 10%
5.0V + 10%
2738 tbl 05
I OUT
DC Output Current
50
50
mA
1. This is the parameter T A . This is the "instant on" case temperature.
2 Industrial temperature: for specific speeds, packages and powers contact
your sales office.
NOTES:
2738 tbl 04
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
Recommended DC Operating
Conditions
Symbol Parameter Min. Typ.
Max.
Unit
2. V TERM must not exceed Vcc + 10% for more than 25% of the cycle time or 10%
maximum, and is limited to < 20mA for the period of V TERM > Vcc + 10%.
V CC
Supply Voltage
4.5
5.0
5.5
V
Capacitance
(1)
(T A = +25°C, f = 1.0MHz)
GND
V IH
Ground
Input High Voltage
0
2.2
0
____
0
6.0 (2)
V
V
Conditions
Symbol
Parameter
(2)
Max.
Unit
V IL
Input Low Voltage
-0.5 (1)
____
0.8
V
C IN
C OUT
Input Capacitance
Output Capacitance
V IN = 3dV
V OUT = 3dV
9
10
pF
pF
NOTES:
1. V IL > -1.5V for pulse width less than 10ns.
2. V TERM must not exceed Vcc + 10%.
2738 tbl 06
NOTES:
2738 tbl 07
1. These parameters are determined by device characterization but are not
production tested (TQFP Package only).
2. 3dV references the interpolated capacitance when the input and output signals
switch from 0V to 3V or from 3V to 0V.
6.42
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT7005S35PFB | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM |
| IDT7005S35PFG | 功能描述:IC SRAM 64KBIT 35NS 64TQFP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,500 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（单线） 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 供应商设备封装:8-MSOP 包装:带卷 (TR) |
| IDT7005S35PFG8 | 制造商:Integrated Device Technology Inc 功能描述: 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 64KBIT 35NS 64TQFP |
| IDT7005S35PFI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 Dual-Port SRAM |
| IDT7005S35XL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 Dual-Port SRAM |
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