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| 型号： | IDT7006L15PFG |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 6/20页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 128KBIT 15NS 64TQFP |
| 标准包装： | 45 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 128K (16K x 8) |
| 速度： | 15ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 64-LQFP |
| 供应商设备封装： | 64-TQFP（14x14） |
| 包装： | 托盘 |
| 其它名称： | 7006L15PFG 800-1358 800-1358-5 800-1358-ND |
IDT7006S/L
High-Speed 16K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (1) (V CC = 5.0V ± 10%)
7006X15
Com'l Only
7006X17
Com'l Only
7006X20
Com'l, Ind
& Military
7006X25
Com'l &
Military
Symbol
Parameter
Test Condition
Version
Typ. (2)
Max.
Typ. (2)
Max.
Typ. (2)
Max.
Typ. (2)
Max.
Unit
I CC
Dynamic Operating
Current
(Both Ports Active)
CE = V IL , Outputs Disabled
SEM = V IH
f = f MAX (3)
COM'L
MIL &
S
L
S
170
160
____
310
260
____
170
160
____
310
260
____
160
150
160
290
240
370
155
145
155
265
220
340
mA
IND
L
____
____
____
____
150
320
145
280
I SB1
Standby Current
(Both Ports - TTL
Level Inputs)
CE L = CE R = V IH
SEM R = SEM L = V IH
f = f MAX (3)
COM'L
MIL &
S
L
S
20
10
____
60
50
____
20
10
____
60
50
____
20
10
20
60
50
90
16
10
16
60
50
80
mA
IND
L
____
____
____
____
10
70
10
65
I SB2
Standby Current
(One Port - TTL
Level Inputs)
CE "A" = V IL and CE "B" = V IH (5)
Active Port Outputs Disabled,
f=f MAX (3)
SEM R = SEM L = V IH
COM'L
MIL &
S
L
S
105
95
____
190
160
____
105
95
____
190
160
____
95
85
95
180
150
240
90
80
90
170
140
215
mA
IND
L
____
____
____
____
85
210
80
180
I SB3
Full Standby Current (Both Both Ports CE L and
Ports - All CMOS Level CE R > V CC - 0.2V
V IN > V CC - 0.2V or
Inputs)
V IN < 0.2V, f = 0 (4)
SEM R = SEM L > V CC - 0.2V
COM'L
MIL &
IND
S
L
S
L
1.0
0.2
____
____
15
5
____
____
1.0
0.2
____
____
15
5
____
____
1.0
0.2
1.0
0.2
15
5
30
10
1.0
0.2
1.0
0.2
15
5
30
10
mA
I SB4
Full Standby Current
(One Port - All
CMOS Level Inputs)
CE "A" < 0.2V and
CE "B" > V CC - 0.2V (5)
SEM R = SEM L > V CC - 0.2V
COM'L
S
L
100
90
170
140
100
90
170
140
90
80
155
130
85
75
145
120
mA
V IN > V CC - 0.2V or V IN < 0.2V
Active Port Outputs Disabled
f = f MAX (3)
MIL &
IND
S
L
____
____
____
____
____
____
____
____
90
80
225
200
85
75
200
170
2739 tbl 10
7006X35
Com'l &
Military
7006X55
Com'l, Ind
& Military
7006X70
Military
Only
Symbol
Parameter
Test Condition
Version
Typ. (2)
Max.
Typ. (2)
Max.
Typ. (2)
Max.
Unit
I CC
Dynamic Operating
Current
(Both Ports Active)
CE = V IL , Outputs Disabled
SEM = V IH
f = f MAX (3)
COM'L
MIL &
S
L
S
150
140
150
250
210
300
150
140
150
250
210
300
____
____
140
____
____
300
mA
IND
L
140
250
140
250
130
250
I SB1
Standby Current
(Both Ports - TTL
Level Inputs)
CE L = CE R = V IH
SEM R = SEM L = V IH
f = f MAX (3)
COM'L
MIL &
S
L
S
13
10
13
60
50
80
13
10
13
60
50
80
____
____
10
____
____
80
mA
IND
L
10
65
10
65
8
65
I SB2
Standby Current
(One Port - TTL
Level Inputs)
CE "A" = V IL and CE "B" = V IH (5)
Active Port Outputs Disabled,
f=f MAX (3)
SEM R = SEM L = V IH
COM'L
MIL &
S
L
S
85
75
85
155
130
190
85
75
85
155
130
190
____
____
80
____
____
190
mA
IND
L
75
160
75
160
70
160
I SB3
I SB4
Full Standby Current
(Both Ports - All CMOS
Level Inputs)
Full Standby Current
(One Port - All CMOS
Level Inputs)
Both Ports CE L and
CE R > V CC - 0.2V
V IN > V CC - 0.2V or
V IN < 0.2V, f = 0 (4)
SEM R = SEM L > V CC - 0.2V
CE "A" < 0.2V and
CE "B" > V CC - 0.2V (5)
SEM R = SEM L > V CC - 0.2V
COM'L
MIL &
IND
COM'L
S
L
S
L
S
L
1.0
0.2
1.0
0.2
80
70
15
5
30
10
135
110
1.0
0.2
1.0
0.2
80
70
15
5
30
10
135
110
____
____
1.0
0.2
____
____
____
____
30
10
____
____
mA
mA
V IN > V CC - 0.2V or V IN < 0.2V
Active Port Outputs Disabled
f = f MAX (3)
MIL &
IND
S
L
80
70
175
150
80
70
175
150
75
65
175
150
NOTES:
1. 'X' in part numbers indicates power rating (S or L)
2. V CC = 5V, T A = +25°C, and are not production tested. I CC DC =120ma (typ)
3. At f = f MAX , address and I/O' S are cycling at the maximum frequency read cycle
of GND to 3V.
4. f = 0 means no address or control lines change.
5. Port "A" may be either left or right port. Port "B"is the opposite from port "A".
6
2739 tbl 11
of 1/t RC , and using “AC Test Conditions ” of input levels
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT7006L15PFG8 | 功能描述:IC SRAM 128KBIT 15NS 64TQFP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，异步 存储容量:128K（8K x 16） 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:70V25S15PF |
| IDT7006L17F | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM |
| IDT7006L17FB | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM |
| IDT7006L17G | 功能描述:IC SRAM 128KBIT 17NS 68PGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT7006L17GB | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM |
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