参数资料
型号: IDT7006L17PF8
厂商: IDT, Integrated Device Technology Inc
文件页数: 12/20页
文件大小: 0K
描述: IC SRAM 128KBIT 17NS 64TQFP
标准包装: 750
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,异步
存储容量: 128K (16K x 8)
速度: 17ns
接口: 并联
电源电压: 4.5 V ~ 5.5 V
工作温度: 0°C ~ 70°C
封装/外壳: 64-LQFP
供应商设备封装: 64-TQFP(14x14)
包装: 带卷 (TR)
其它名称: 7006L17PF8
IDT7006S/L
High-Speed 16K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range (6)
7006X15
Com'l Only
7006X17
Com'l Only
7006X20
Com'l, Ind
& Military
7006X25
Com'l &
Military
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Unit
BUSY TIMING (M/ S =V IH )
t BAA
t BDA
t BAC
t BDC
BUSY Access Time from Address Match
BUSY Disable Time from Address Not Matched
BUSY Access Time from Chip Enable Low
BUSY Access Time from Chip Enable High
____
____
____
____
15
15
15
15
____
____
____
____
17
17
17
17
____
____
____
____
20
20
20
17
____
____
____
____
20
20
20
17
ns
ns
ns
ns
t APS
t BDD
t WH
Arbitration Priority Set-up Time
BUSY Disable to Valid Data (3)
Write Hold After BUSY (5)
(2)
5
____
12
____
18
____
5
____
13
____
18
____
5
____
15
____
30
____
5
____
17
____
30
____
ns
ns
ns
BUSY TIMING (M/ S =V IL )
Write Hold After BUSY
t WB
t WH
BUSY Input to Write (4)
(5)
0
12
____
____
0
13
____
____
0
15
____
____
0
17
____
____
ns
ns
PORT-TO-PORT DELAY TIMING
t WDD
Write Pulse to Data Delay (1)
____
30
____
30
____
45
____
50
ns
t DDD
Write Data Valid to Read Data Delay
(1)
____
25
____
25
____
35
____
35
ns
2739 tbl 15a
7006X35 Com'l
& Military
7006X55
Com'l, Ind
& Military
7006X70
Military
Only
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
BUSY TIMING (M/ S =V IH )
t BAA
t BDA
t BAC
t BDC
t APS
t BDD
t WH
BUSY Access Time from Address Match
BUSY Disable Time from Address Not Matched
BUSY Access Time from Chip Enable Low
BUSY Access Time from Chip Enable High
Arbitration Priority Set-up Time (2)
BUSY Disable to Valid Data (3)
Write Hold After BUSY (5)
____
____
____
____
5
____
25
20
20
20
20
____
35
____
____
____
____
____
5
____
25
45
40
40
35
____
40
____
____
____
____
____
5
____
25
45
40
40
35
____
45
____
ns
ns
ns
ns
ns
ns
ns
BUSY TIMING (M/ S =V IL )
Write Hold After BUSY
t WB
t WH
BUSY Input to Write (4)
(5)
0
25
____
____
0
25
____
____
0
25
____
____
ns
ns
PORT-TO-PORT DELAY TIMING
t WDD
Write Pulse to Data Delay (1)
____
60
____
80
____
95
ns
t DDD
Write Data Valid to Read Data Delay
(1)
____
45
____
65
____
80
ns
NOTES:
1. Port-to-port delay through RAM cells from writing port to reading port, refer to "Timing Waveform of Write with Port-to-Port Read and BUSY ".
2. To ensure that the earlier of the two ports wins.
3. t BDD is a calculated parameter and is the greater of 0, t WDD – t WP (actual) or t DDD – t DW (actual).
4. To ensure that the write cycle is inhibited with port "B" during contention on port "A".
5. To ensure that a write cycle is completed on port "B" after contention with port "A".
6. 'X' is part numbers indicates power rating (S or L).
.
12
2739 tbl 15b
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