参数资料
型号: IDT7006S20G
厂商: IDT, Integrated Device Technology Inc
文件页数: 13/20页
文件大小: 0K
描述: IC SRAM 128KBIT 20NS 68PGA
标准包装: 3
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,异步
存储容量: 128K (16K x 8)
速度: 20ns
接口: 并联
电源电压: 4.5 V ~ 5.5 V
工作温度: 0°C ~ 70°C
封装/外壳: 68-BPGA
供应商设备封装: 68-PGA(29.46x29.46)
包装: 托盘
其它名称: 7006S20G
IDT7006S/L
High-Speed 16K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Timing Waveform of Write with Port-to-Port Read and BUSY (2,5) (M/ S = V IH ) (4)
t WC
ADDR "A"
MATCH
t WP
R/ W "A"
t APS
DATA IN "A"
(1)
t DW
VALID
t DH
ADDR "B"
MATCH
BUSY "B"
t WDD
DATA OUT "B"
t DDD (3)
NOTES:
1. To ensure that the earlier of the two ports wins. t APS is ignored for M/S = V IL (SLAVE).
2. CE L = CE R = V IL
3. OE = V IL for the reading port.
4. If M/ S = V IL (slave) then BUSY is input ( BUSY "A" = V IH ) and BUSY "B" = "don't care", for this example.
5. All timing is the same for left and right port. Port "A' may be either left or right port. Port "B" is the port opposite from Port "A".
Timing Waveform of Write with BUSY
t WP
R/ W "A"
t WB (3)
t BDA
t BDD
VALID
2739 drw 13
BUSY "B"
R/ W "B"
(2)
t WH (1)
2739 drw 14
NOTES:
1. t WH must be met for both BUSY input (slave) and output (master).
2. BUSY is asserted on Port "B", blocking R/ W "B" , until BUSY "B" goes HIGH.
3. t WB is only for the 'Slave' Version .
13
6.42
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IDT7006S20GB 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM
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