- 您现在的位置：买卖IC网 > PDF目录4026 > IDT7007S15PF8 (IDT, Integrated Device Technology Inc)IC SRAM 256KBIT 15NS 80TQFP PDF资料下载
参数资料
| 型号： | IDT7007S15PF8 |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 7/21页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 256KBIT 15NS 80TQFP |
| 标准包装： | 750 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 256K (32K x 8) |
| 速度： | 15ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 80-LQFP |
| 供应商设备封装： | 80-TQFP（14x14） |
| 包装： | 带卷 (TR) |
| 其它名称： | 7007S15PF8 |
IDT7007S/L
High-Speed 32K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (1) (con't.) (V CC = 5.0V ± 10%)
7007X35
Com'l, Ind
& Military
7007X55
Com'l, Ind
& Military
Symbol
Parameter
Test Condition
Version
Typ. (2)
Max.
Typ. (2)
Max.
Unit
I CC
Dynamic Operating Current
(Both Ports Active)
CE = V IL , Outputs Disabled
SEM = V IH
f = f MAX (3)
COM'L
MIL &
S
L
S
160
160
160
295
255
335
150
150
150
270
230
310
mA
IND
L
160
295
150
270
I SB1
Standby Current
(Both Ports - TTL Level
Inputs)
CE L = CE R = V IH
SEM R = SEM L = V IH
f = f MAX (3)
COM'L
MIL &
S
L
S
20
20
20
85
60
100
20
20
13
85
60
100
mA
IND
L
20
80
13
80
I SB2
Standby Current
(One Port - TTL Level Inputs)
CE "A" = V IL and CE "B" = V IH (5)
Active Port Outputs Disabled,
f=f MAX (3)
SEM R = SEM L = V IH
COM'L
MIL &
S
L
S
95
95
95
185
155
215
85
85
85
165
135
195
mA
IND
L
95
185
85
165
I SB3
I SB4
Full Standby Current (Both
Ports - All CMOS Level
Inputs)
Full Standby Current
(One Port - All CMOS Level
Inputs)
Both Ports CE L and
CE R > V CC - 0.2V
V IN > V CC - 0.2V or
VIN < 0.2V, f = 0 (4)
SEM R = SEM L > V CC - 0.2V
CE "A" < 0.2V and
CE "B" > V CC - 0.2V (5)
SEM R = SEM L > V CC - 0.2V
COM'L
MIL &
IND
COM'L
S
L
S
L
S
L
1.0
0.2
1.0
0.2
90
90
15
5
30
10
160
135
1.0
0.2
1.0
0.2
80
80
15
5
30
10
135
110
mA
mA
V IN > V CC - 0.2V or V IN < 0.2V
Active Port Outputs Disabled
f = f MAX (3)
MIL &
IND
S
L
90
90
190
165
80
80
165
140
NOTES:
1. 'X' in part numbers indicates power rating (S or L)
2. V CC = 5V, T A = +25°C, and are not production tested. I CCDC = 120mA (Typ.)
3. At f = f MAX , address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/t RC , and using
“AC Test Conditions” of input levels of GND to 3V.
4. f = 0 means no address or control lines change.
5. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
7
2940 tbl 10
相关PDF资料 |
PDF描述 |
|---|---|
| IDT70V25L25J | IC SRAM 128KBIT 25NS 84PLCC |
| IDT70V25L20J | IC SRAM 128KBIT 20NS 84PLCC |
| IDT7025L45J | IC SRAM 128KBIT 45NS 84PLCC |
| IDT7025L35J | IC SRAM 128KBIT 35NS 84PLCC |
| IDT7025L30J | IC SRAM 128KBIT 30NS 84PLCC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT7007S15PFB | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM |
| IDT7007S15PFI | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM |
| IDT7007S20G | 功能描述:IC SRAM 256KBIT 20NS 68PGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT7007S20GB | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM |
| IDT7007S20GI | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM |
发布紧急采购，3分钟左右您将得到回复。