- 您现在的位置：买卖IC网 > PDF目录3995 > IDT7008L35PF (IDT, Integrated Device Technology Inc)IC SRAM 512KBIT 35NS 100TQFP PDF资料下载
参数资料
| 型号： | IDT7008L35PF |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 13/19页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 512KBIT 35NS 100TQFP |
| 标准包装： | 6 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 512K (64K x 8) |
| 速度： | 35ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 100-LQFP |
| 供应商设备封装： | 100-TQFP（14x14） |
| 包装： | 托盘 |
| 其它名称： | 7008L35PF |
IDT7008S/L
High-Speed 64K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Timing Waveform of Write with Port-to-Port Read and BUSY (2,5) (M/ S = V IH ) (4)
t WC
ADDR "A"
MATCH
t WP
R/ W "A"
DATA IN "A"
t DW
VALID
t DH
ADDR "B"
t APS
(1)
MATCH
BUSY "B"
t WDD
t BDA
t BDD
DATA OUT "B"
NOTES:
t DDD
(3)
VALID
3198 drw 13
1. To ensure that the earlier of the two ports wins. t APS is ignored for M/ S = V IL (SLAVE).
2. CE L = CE R = V IL, refer to Chip Enable Truth Table.
3. OE = V IL for the reading port.
4. If M/ S = V IL (SLAVE), then BUSY is an input ( BUSY "A" = V IH and BUSY "B" = "don't care", for this example).
5. All timing is the same for left and right ports. Port "A" may be either the left or right port. Port "B" is the port opposite from port "A".
Timing Waveform of Write with BUSY (M/ S = V IL )
t WP
R/ W "A"
t WB (3)
BUSY "B"
t WH (1)
R/ W "B"
(2)
3198 drw 14
NOTES:
1. t WH must be met for both BUSY input (SLAVE) and output (MASTER).
2. BUSY is asserted on port "B" blocking R/W "B" , until BUSY "B" goes HIGH.
3. t WB is only for the 'Slave' version.
13
6.42
相关PDF资料 |
PDF描述 |
|---|---|
| KMC68EN360AI33L | IC MPU QUICC 33MHZ 240-FQFP |
| IDT7008L25PF | IC SRAM 512KBIT 25NS 100TQFP |
| IDT7008L20PF | IC SRAM 512KBIT 20NS 100TQFP |
| KMC68360VR33L | IC MPU QUICC 33MHZ 357-PBGA |
| IDT70V3379S4PRF8 | IC SRAM 576KBIT 4NS 128TQFP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT7008L35PF8 | 功能描述:IC SRAM 512KBIT 35NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT7008L35PFB | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM |
| IDT7008L35PFI | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM |
| IDT7008L55G | 功能描述:IC SRAM 512KBIT 55NS 84PGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT7008L55GB | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM |
发布紧急采购，3分钟左右您将得到回复。