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| 型号： | IDT7008S25G |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 6/19页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 512KBIT 25NS 84PGA |
| 标准包装： | 3 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 512K (64K x 8) |
| 速度： | 25ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 84-BPGA |
| 供应商设备封装： | 84-PGA（27.94x27.94） |
| 包装： | 托盘 |
| 其它名称： | 7008S25G |
IDT7008S/L
High-Speed 64K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Absolute Maximum Ratings (1)
Symbol Rating Commercial Military
& Industrial
Unit
Recommended DC Operating
Conditions
V TERM (2)
Terminal Voltage
-0.5 to +7.0
-0.5 to +7.0
V
Symbol
Parameter
Min.
Typ.
Max.
Unit
with Respect
to GND
V CC
Supply Voltage
4.5
5.0
5.5
V
T BIAS
Temperature
-55 to +125
-65 to +135
o
C
GND
Ground
0
0
0
V
6.0
Under Bias
V IH
Input High Voltage
2.2
____
(2)
V
T STG
Storage
Temperature
-65 to +150
-65 to +150
o
C
V IL
Input Low Voltage
-0.5 (1)
____
0.8
V
3198 tbl 07
I OUT
DC Output Current
50
50
mA
NOTES:
NOTES:
3198 tbl 05
1. V IL > -1.5V for pulse width less than 10ns.
2. V TERM must not exceed Vcc + 10%.
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect
reliability.
2. V TERM must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of V TERM > Vcc + 10%.
Capacitance
(T A = +25°C, f = 1.0mhz) (TQFP Only)
Symbol Parameter Conditions
Max.
Unit
C IN
C OUT (2)
Input Capacitance
Output Capacitance
V IN = 0V
V OUT = 0V
9
10
pF
pF
Maximum Operating Temperature
and Supply Voltage (1)
Ambient
Grade Temperature GND Vcc
3198 tbl 08
NOTES:
1. This parameter is determined by device characterization but is not production
tested.
2. C OUT also references C I/O .
-55 C to+125 C
Military
Commercial
Industrial
O O
0 O C to +70 O C
-40 O C to +85 O C
0V
0V
0V
5.0V + 10%
5.0V + 10%
5.0V + 10%
3198 tbl 06
NOTES:
1. This is the parameter T A . This is the "instant on" case tempreature.
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (2) (V CC = 5.0V ± 10%)
7008S
7008L
Input Leakage Current
Symbol
|I LI |
|I LO |
V OL
V OH
Parameter
(1)
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Conditions
V CC = 5.5V, V IN = 0V to V CC
CE = V IH , V OUT = 0V to V CC
I OL = 4mA
I OH = -4mA
Min.
___
___
___
2.4
Max.
10
10
0.4
___
Min.
___
___
___
2.4
Max.
5
5
0.4
___
Unit
μA
μA
V
V
NOTES:
1. At Vcc < 2.0V, input leakages are undefined.
2. Refer to Chip Enable Truth Table.
6
3198 tbl 09
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT7008S25GB | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM |
| IDT7008S25GI | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM |
| IDT7008S25J | 功能描述:IC SRAM 512KBIT 25NS 84PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT7008S25J8 | 功能描述:IC SRAM 512KBIT 25NS 84PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT7008S25JB | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM |
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