参数资料
型号: IDT70125L35J
厂商: IDT, Integrated Device Technology Inc
文件页数: 7/15页
文件大小: 0K
描述: IC SRAM 18KBIT 35NS 52PLCC
标准包装: 24
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,异步
存储容量: 18K(2K x 9)
速度: 35ns
接口: 并联
电源电压: 4.5 V ~ 5.5 V
工作温度: 0°C ~ 70°C
封装/外壳: 52-LCC(J 形引线)
供应商设备封装: 52-PLCC(19x19)
包装: 管件
其它名称: 70125L35J
IDT70121/IDT70125
High-Speed 2K x 9 Dual-Port Static RAM with Busy & Interrupt
Industrial and Commercial Temperature Ranges
Timing Waveform of Read Cycle No. 1, Either Side (1,2,4)
t RC
ADDRESS
t OH
t AA
t OH
DATA OUT
PREVIOUS DATA VALID
DATA VALID
BUSY OUT
2654 drw 05
t BDD
(3,4)
Timing Waveform of Read Cycle No. 2, Either Side (5)
t ACE
CE
OE
DATA OUT
t AOE
t LZ (1)
(4)
t HZ (2)
VALID DATA
t HZ (2)
I CC
CURRENT
t PU
t LZ (1)
50%
t PD
(4)
50%
I SS
2654 drw 06
NOTES:
1. Timing depends on which signal is aserted last, OE or CE .
2. Timing depends on which signal is deaserted first, OE or CE .
3. t BDD delay is required only in a case where the opposite port is completing a write operation to the same address location. For simultaneous read operations
BUSY has no relationship to valid output data.
4. Start of valid data depends on which timing becomes effective last, t AOE, t ACE, t AA, or t BDD.
5. R/ W = V IH , CE = V IL , and OE = V IL , and the address is valid prior to other coincidental with CE transition LOW.
7
相关PDF资料
PDF描述
2-84953-9 CONN FPC 29POS 1MM RT ANG SMD
IDT70121L35J IC SRAM 18KBIT 35NS 52PLCC
IDT7143LA90J IC SRAM 32KBIT 90NS 68PLCC
IDT7143LA55J IC SRAM 32KBIT 55NS 68PLCC
2-1734248-4 CONN FPC/ZIF 24POS 1MM VERT SMD
相关代理商/技术参数
参数描述
IDT70125L35J8 功能描述:IC SRAM 18KBIT 35NS 52PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M(256K x 36) 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:71V67703S75PFGI
IDT70125L35JG 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT
IDT70125L35JGI 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT
IDT70125L35JI 功能描述:IC SRAM 18KBIT 35NS 52PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M(256K x 36) 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:71V67703S75PFGI
IDT70125L35JI8 功能描述:IC SRAM 18KBIT 35NS 52PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M(256K x 36) 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:71V67703S75PFGI