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参数资料
| 型号： | IDT7014S12PFI |
| 厂商： | Integrated Device Technology, Inc. |
| 英文描述： | HIGH-SPEED 4K x 9DUAL-PORT STATIC RAM |
| 中文描述： | 高速4K的x 9DUAL -端口静态内存 |
| 文件页数： | 8/9页 |
| 文件大小： | 89K |
| 代理商： | IDT7014S12PFI |
IDT7014S
High-Speed 4K x 9 Dual-Port Static RAM Industrial and Commercial Temperature Ranges
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The IDT7014 provides two ports with separate control, address,
and I/O pins that permt independent access for reads or writes to
any location in memory. It lacks the chip enable feature of CMOS Dual
Ports, thus it operates in active mode as soon as power is applied. Each
port has its own Output Enable control (
OE
). In the read mode, the port
’
s
OE
turns on the output drivers when set LOW. The user application should
avoid simultaneous write operations to the same memory location. There
is no on-chip arbitration circuitry to resolve write priority and partial data
fromboth ports may be written. READ/WRITE conditions are illustrated
in Table 1.
NOTE:
1. A
OL
- A
11L
is not equal to A
OR
- A
11R.
'H' = HIGH,'L' = LOW, 'X' = Don
’
t Care, and 'Z' = HIGH Impedance.
2528 drw 10
R/
t
WP
t
DW
DATA
OUT
ADDRESS
DATA
IN
t
AW
t
AS
(5)
t
WR
t
DH
t
OW
t
HZ(4)
(3)
(3)
t
WZ(4)
Left or Right Port
(1)
R/
D
0-8
Function
L
X
DATA
IN
Data written into memory
H
L
DATA
OUT
Data in memory output on port
X
H
Z
High-impedance outputs
2528 tbl 10
NOTES:
1. R/
W
must be HIGH during all address transitions.
2. t
WR
is measured from R/
W
going HIGH to the end of write cycle.
3. During this period, the I/O pins are in the output state, and input signals must not be applied.
4. Transition is measured 0mV fromthe Low or High-impedance voltage with the Output Test Load (Figure 2).
5. If
OE
is LOW during a R/
W
controlled write cycle, the write pulse width must be the larger of t
WP
or (t
WZ
+ t
DW
) to allow the I/O drivers to turn off data to be
placed on the bus for the required t
DW
. If
OE
is HIGH during an R/
W
controlled write cycle, this requirement does not apply and the write pulse can be as short as
the specified t
WP
.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT7014S12XL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x9 Dual-Port SRAM |
| IDT7014S15J | 功能描述:IC SRAM 36KBIT 15NS 52PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，异步 存储容量:128K（8K x 16） 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:70V25S15PF |
| IDT7014S15J8 | 功能描述:IC SRAM 36KBIT 15NS 52PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:71V67703S75PFGI |
| IDT7014S15JI | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 4K x 9DUAL-PORT STATIC RAM |
| IDT7014S15PF | 功能描述:IC SRAM 36KBIT 15NS 64TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，异步 存储容量:128K（8K x 16） 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:70V25S15PF |
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