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参数资料
| 型号： | IDT7014S25JI |
| 厂商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分类： | DRAM |
| 英文描述： | HIGH-SPEED 4K x 9DUAL-PORT STATIC RAM |
| 中文描述： | 4K X 9 DUAL-PORT SRAM, 25 ns, PQCC52 |
| 封装： | PLASTIC, LCC-52 |
| 文件页数： | 7/9页 |
| 文件大小： | 89K |
| 代理商： | IDT7014S25JI |
6.42
IDT7014S/L
High-Speed 4K x 9 Dual-Port Static RAM Industrial and Commercial Temperature Ranges
+,%-,
%&'()*
NOTES:
1. Transition is measured 0mV fromLow or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. The specification for t
DH
must be met by the device supplying write data to the RAMunder all operating conditions. Although t
DH
and t
OW
values will vary over voltage
and temperature, the actual t
DH
will always be smaller than the actual t
OW
.
4. Port-to-port delay through RAMcells fromwriting port to reading port, refer to
“
Timng Waveformof Write With Port-to-Port Read
”
.
Symbol
Parameter
7014S12
Com'l Only
7014S15
Com'l & Ind
Unit
Mn.
Max.
Mn.
Max.
WRITE CYCLE
t
WC
Write Cycle Time
12
____
15
____
ns
t
AW
Address Valid to End-of-Write
10
____
14
____
ns
t
AS
Address Set-up Time
0
____
0
____
ns
t
WP
Write Pulse Width
10
____
12
____
ns
t
WR
Write Recovery Time
1
____
1
____
ns
t
DW
Data Valid to End-of-Write
8
____
10
____
ns
t
HZ
Output High-Z Time
(1,2)
____
7
____
7
ns
t
DH
Data Hold Time
(3)
0
____
0
____
ns
t
WZ
Write Enable to Output in High-Z
(1,2)
____
7
____
7
ns
t
OW
Output Active fromEnd-of-Write
(1,2,3)
0
____
0
____
ns
t
WDD
Write Pulse to Data Delay
(4)
____
25
____
30
ns
t
DDD
Write Data Valid to Read Data Delay
(4)
____
22
____
25
ns
2528 tbl 09a
Symbol
Parameter
7014S20
Com'l & Ind
7014S25
Com'l & Ind
Unit
Mn.
Max.
Mn.
Max.
WRITE CYCLE
t
WC
Write Cycle Time
20
____
25
____
ns
t
AW
Address Valid to End-of-Write
15
____
20
____
ns
t
AS
Address Set-up Time
0
____
0
____
ns
t
WP
Write Pulse Width
15
____
20
____
ns
t
WR
Write Recovery Time
2
____
2
____
ns
t
DW
Data Valid to End-of-Write
12
____
15
____
ns
t
HZ
Output High-Z Time
(1,2)
____
9
____
11
ns
t
DH
Data Hold Time
(3)
0
____
0
____
ns
t
WZ
Write Enable to Output in High-Z
(1,2)
____
9
____
11
ns
t
OW
Output Active fromEnd-of-Write
(1,2,3)
0
____
0
____
ns
t
WDD
Write Pulse to Data Delay
(4)
____
40
____
45
ns
t
DDD
Write Data Valid to Read Data Delay
(4)
____
30
____
35
ns
2528 tbl 09b
相关PDF资料 |
PDF描述 |
|---|---|
| IDT7014S25PFI | HIGH-SPEED 4K x 9DUAL-PORT STATIC RAM |
| IDT7014S20JI | HIGH-SPEED 4K x 9DUAL-PORT STATIC RAM |
| IDT7014S20PFI | HIGH-SPEED 4K x 9DUAL-PORT STATIC RAM |
| IDT7014S12JI | HIGH-SPEED 4K x 9DUAL-PORT STATIC RAM |
| IDT7014S12PFI | HIGH-SPEED 4K x 9DUAL-PORT STATIC RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT7014S25PF | 功能描述:IC SRAM 36KBIT 25NS 64TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，异步 存储容量:128K（8K x 16） 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:70V25S15PF |
| IDT7014S25PF8 | 功能描述:IC SRAM 36KBIT 25NS 64TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:71V67703S75PFGI |
| IDT7014S25PFI | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 4K x 9DUAL-PORT STATIC RAM |
| IDT7014S25XL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x9 Dual-Port SRAM |
| IDT7014S25XLB | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x9 Dual-Port SRAM |
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