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参数资料
| 型号： | IDT7015S25PF |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 13/20页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 72KBIT 25NS 80TQFP |
| 标准包装： | 45 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 72K（8K x 9） |
| 速度： | 25ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 80-LQFP |
| 供应商设备封装： | 80-TQFP（14x14） |
| 包装： | 托盘 |
| 其它名称： | 7015S25PF |
IDT7015S/L
Timing Waveform of Read with BUSY
High-Speed 8K x 9 Dual-Port Static RAM
(2,4,5)
t WC
Military, Industrial and Commercial Temperature Ranges
(M/ S = V IH )
ADDR "A"
MATCH
t WP
R/ W "A"
DATA IN "A"
t DW
VALID
t DH
ADDR "B"
t APS
(1)
MATCH
BUSY "B"
t WDD
t BDA
t BDD
DATA OUT "B"
NOTES:
t DDD
(3)
VALID
2954 drw 13
1. To ensure that the earlier of the two ports wins. t APS is ignored for M/S=V IL
2. CE L = CE R = V IL
3. OE = V IL for the reading port.
4. If M/ S =V IL (SLAVE), BUSY is an input. Then for this example, BUSY “A” =V IH and BUSY “B” input is shown above.
5. All timing is the same for left and right ports. Port "A" may be either the left or right port. Port "B" is the port opposite from Port "A".
Timing Waveform of Write with BUSY (3)
t WP
R/ W "A"
t WB
BUSY "B"
t WH
(1)
NOTES:
R/ W "B"
(2)
2954 drw 14
1. t WH must be met for both BUSY input (SLAVE) and output (MASTER).
2. BUSY is asserted on port "B" blocking R/ W "B", until BUSY "B" goes HIGH.
3. All timing is the same for left and right ports. Port "A" may be either the left or right port. Port "B" is the port opposite from Port "A".
13
6.42
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT7015S25PF8 | 功能描述:IC SRAM 72KBIT 25NS 80TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:71V67703S75PFGI |
| IDT7015S25PFB | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM |
| IDT7015S25PFI | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM |
| IDT7015S35G | 功能描述:IC SRAM 72KBIT 35NS 68PGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT7015S35GB | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM |
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