参数资料
型号: IDT7024S17J8
厂商: IDT, Integrated Device Technology Inc
文件页数: 13/22页
文件大小: 0K
描述: IC SRAM 64KBIT 17NS 84PLCC
标准包装: 200
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,异步
存储容量: 64K(4K x 16)
速度: 17ns
接口: 并联
电源电压: 4.5 V ~ 5.5 V
工作温度: 0°C ~ 70°C
封装/外壳: 84-LCC(J 形引线)
供应商设备封装: 84-PLCC(29.21x29.21)
包装: 带卷 (TR)
其它名称: 7024S17J8
IDT7024S/L
High-Speed 4K x 16 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range (6)
7024X15
Com'l Only
7024X17
Com'l Only
7024X20
Com'l, Ind
& Military
7024X25
Com'l &
Military
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Unit
BUSY TIMING (M/ S = V IH )
t BAA
t BDA
t BAC
t BDC
BUSY Access Time from Address Match
BUSY Disable Time from Address Not Match
BUSY Access Time from Chip Enable Low
BUSY Disable Time from Chip Enable High
____
____
____
____
15
15
15
15
____
____
____
____
17
17
17
17
____
____
____
____
20
20
20
17
____
____
____
____
20
20
20
17
ns
ns
ns
ns
BUSY Disable to Valid Data
t APS
t BDD
t WH
Arbitration Priority Set-up Time
(3)
Write Hold After BUSY (5)
(2)
5
____
12
____
18
____
5
____
13
____
18
____
5
____
15
____
30
____
5
____
17
____
30
____
ns
ns
ns
BUSY INPUT TIMING (M/ S = V IH )
Write Hold After BUSY
t WB
t WH
BUSY Input to Write (4)
(5)
0
12
____
____
0
13
____
____
0
15
____
____
0
17
____
____
ns
ns
PORT-TO-PORT DELAY TIMING
t WDD
t DDD
Write Pulse to Data Delay (1)
Write Data Valid to Read Data Delay (1)
____
____
30
25
____
____
30
25
____
____
45
35
____
____
50
35
ns
ns
2740 tbl 14a
7024X35
Com'l &
Military
7024X55
Com'l, Ind
& Military
7024X70
Military Only
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
BUSY TIMING (M/ S = V IH )
Write Hold After BUSY
t BAA
t BDA
t BAC
t BDC
t APS
t BDD
t WH
BUSY Access Time from Address Match
BUSY Disable Time from Address Not Match
BUSY Access Time from Chip Enable Low
BUSY Disable Time from Chip Enable High
Arbitration Priority Set-up Time (2)
BUSY Disable to Valid Data (3)
(5)
____
____
____
____
5
____
25
20
20
20
20
____
35
____
____
____
____
____
5
____
25
45
40
40
35
____
40
____
____
____
____
____
5
____
25
45
40
40
35
____
45
____
ns
ns
ns
ns
ns
ns
ns
BUSY INPUT TIMING (M/ S = V IH )
t WB
t WH
BUSY Input to Write (4)
Write Hold After BUSY (5)
0
25
____
____
0
25
____
____
0
25
____
____
ns
ns
PORT-TO-PORT DELAY TIMING
t WDD
Write Pulse to Data Delay (1)
____
60
____
80
____
95
ns
t DDD
Write Data Valid to Read Data Delay
(1)
____
45
____
65
____
80
ns
2740 tbl 14b
NOTES:
1. Port-to-port delay through RAM cells from writing port to reading port, refer to "Timing Waveform of Write Port-to-Port Read and BUSY (M/ S = V IH )".
2. To ensure that the earlier of the two ports wins.
3. t BDD is a calculated parameter and is the greater of 0ns, t WDD – t WP (actual) or t DDD – t DW (actual).
4. To ensure that the write cycle is inhibited on port 'B' during contention with port 'A'.
5. To ensure that a write cycle is completed on port 'B' after contention with port 'A'.
6. 'X' in part number indicates power rating (S or L).
13
6.42
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