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| 型号： | IDT7024S35J8 |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 11/22页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 64KBIT 35NS 84PLCC |
| 标准包装： | 200 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 64K（4K x 16） |
| 速度： | 35ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 84-LCC（J 形引线） |
| 供应商设备封装： | 84-PLCC（29.21x29.21） |
| 包装： | 带卷 (TR) |
| 其它名称： | 7024S35J8 |
IDT7024S/L
High-Speed 4K x 16 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Timing Waveform of Write Cycle No. 1, R/ W Controlled Timing (1,5,8)
t WC
ADDRESS
t HZ (7)
OE
t AW
CE or SEM
UB or LB
(9)
(9)
t AS (6)
t WP (2)
t WR
(3)
R/ W
t WZ
(7)
t OW
DATA OUT
(4)
t DW
t DH
(4)
CE or SEM
DATA IN
2740 drw 09
Timing Waveform of Write Cycle No. 2, CE , UB , LB Controlled Timing (1,5)
t WC
ADDRESS
t AW
(9)
UB or LB
(9)
R/ W
t AS (6)
t EW (2)
t DW
t WR (3)
t DH
DATA IN
2740 drw 10
NOTES:
1. R/ W or CE or UB & LB = V IH during all address transitions.
2. A write occurs during the overlap (t EW or t WP ) of a UB or LB = V IL and a CE = V IL and a R/ W = V IL for memory array writing cycle.
3. t WR is measured from the earlier of CE or R/ W (or SEM or R/ W ) going HIGH = V IL to the end-of-write cycle.
4. During this period, the I/O pins are in the output state and input signals must not be applied.
5. If the CE or SEM LOW = V IL transition occurs simultaneously with or after the R/ W = V IL transition, the outputs remain in the High-impedance state.
6. Timing depends on which enable signal is asserted last, CE , R/ W , UB , or LB .
7. This parameter is guaranted by device characterization, but is not production tested. Transition is measured 0mV steady state with the Output Test Load
(Figure 2).
8. If OE = V IL during R/ W controlled write cycle, the write pulse width must be the larger of t WP for (t WZ + t DW ) to allow the I/O drivers to turn off and data to be
placed on the bus for the required t DW . If OE = V IH during an R/ W controlled write cycle, this requirement does not apply and the write pulse can be as short as the
specified t WP .
9. To access RAM, CE = V IL , UB or LB = V IL , and SEM = V IH . To access Semaphore, CE = V IH or UB & LB = V IH , and SEM = V IL . t EW must be
met for either condition.
11
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| IDT7024S35PF | 功能描述:IC SRAM 64KBIT 35NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，异步 存储容量:128K（8K x 16） 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:70V25S15PF |
| IDT7024S35PF8 | 功能描述:IC SRAM 64KBIT 35NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:71V67703S75PFGI |
| IDT7024S35PFG | 制造商:Integrated Device Technology Inc 功能描述: |
| IDT7024S45J | 功能描述:IC SRAM 64KBIT 45NS 84PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，异步 存储容量:128K（8K x 16） 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:70V25S15PF |
| IDT7024S45J8 | 功能描述:IC SRAM 64KBIT 45NS 84PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:71V67703S75PFGI |
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