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参数资料
| 型号： | IDT7025L55PF8 |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 6/22页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 128KBIT 55NS 100TQFP |
| 标准包装： | 750 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 128K（8K x 16） |
| 速度： | 55ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 100-LQFP |
| 供应商设备封装： | 100-TQFP（14x14） |
| 包装： | 带卷 (TR) |
| 其它名称： | 7025L55PF8 |
IDT7025S/L
High-Speed 8K x 16 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Absolute Maximum Ratings (1)
Symbol Rating Commercial Military
& Industrial
V TERM (2) Terminal Voltage -0.5 to +7.0 -0.5 to +7.0
with Respect
to GND
Unit
V
Maximum Operating Temperature
and Supply Voltage (1)
Grade GND Vcc
Ambient Temperature
Military -55 O C to +125 O C 0V 5.0V + 10%
0 C to +70 C
T BIAS
T STG
Temperature
Under Bias
Storage
Temperature
-55 to +125
-65 to +150
-65 to +135
-65 to +150
o
o
C
C
Commercial
Industrial
NOTES:
O O
-40 O C to +85 O C
0V
0V
5.0V + 10%
5.0V + 10%
2683 tbl 05
I OUT
DC Output
Current
50
50
mA
1. This is parameter T A . This is the "instant on" case temperature.
NOTES:
2683 tbl 04
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect
reliability.
2. V TERM must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20 mA for the period over V TERM > Vcc + 10%.
Recommended DC Operating
Conditions
Symbol Parameter Min. Typ.
Max.
Unit
V CC
GND
Supply Voltage
Ground
4.5
0
5.0
0
5.5
0
V
V
-0.5
6.0
Capacitance (1) (T A = +25°C, f = 1.0mhz)
Symbol Parameter Conditions (2) Max. Unit
V IH
V IL
Input High Voltage
Input Low Voltage
2.2
(1)
____
____
(2)
0.8
V
V
C IN
C OUT
Input Capacitance
Output Capacitance
V IN = 3dV
V OUT = 3dV
9
10
pF
pF
NOTES:
1. V I L > -1.5V for pulse width less than 10ns.
2. V TERM must not exceed Vcc + 10%.
2683 tbl 06
NOTES:
2683 tbl 07
1. This parameter is determined by device characterization but is not production
tested. For TQFP package only.
2. 3dV references the interpolated capacitance when the input and output signals
switch from 0V to 3V or from 3V to 0V.
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (V CC = 5.0V ± 10%)
7025S
7025L
Symbol
|I LI |
|I LO |
V OL
V OH
Parameter
Input Leakage Current (1)
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Conditions
V CC = 5.5V, V IN = 0V to V CC
V OUT = 0V to V CC
I OL = +4mA
I OH = -4mA
Min.
___
___
___
2.4
Max.
10
10
0.4
___
Min.
___
___
___
2.4
Max.
5
5
0.4
___
Unit
μA
μA
V
V
NOTE:
1. At Vcc < 2.0V input leakages are undefined.
6.42
2683 tbl 08
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