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| 型号： | IDT7025S55PF |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 12/22页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 128KBIT 55NS 100TQFP |
| 标准包装： | 45 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 128K（8K x 16） |
| 速度： | 55ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 100-LQFP |
| 供应商设备封装： | 100-TQFP（14x14） |
| 包装： | 托盘 |
| 其它名称： | 7025S55PF |
IDT7025S/L
High-Speed 8K x 16 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Timing Waveform of Write Cycle No. 1, R/ W Controlled Timing (1,5,8)
t WC
ADDRESS
t HZ (7)
OE
t AW
CE or SEM
UB or LB
(9)
(9)
t AS (6)
t WP (2)
t WR
(3)
R/ W
t WZ
(7)
t OW
DATA OUT
(4)
t DW
t DH
(4)
CE or SEM
DATA IN
2683 drw 09
Timing Waveform of Write Cycle No. 2, CE , UB , LB Controlled Timing (1,5)
t WC
ADDRESS
t AW
(9)
UB or LB
(9)
R/ W
t AS (6)
t EW (2)
t DW
t WR (3)
t DH
DATA IN
2683 drw 10
NOTES:
1. R/ W or CE or UB & LB = V IH during all address transitions.
2. A write occurs during the overlap (t EW or t WP ) of a UB or LB = V IL and a CE = V IL and a R/ W = V IL for memory array writing cycle.
3. t WR is measured from the earlier of CE or R/ W (or SEM or R/ W ) going to V IH to the end-of-write cycle.
4. During this period, the I/O pins are in the output state and input signals must not be applied.
5. If the CE or SEM LOW = V IL transition occurs simultaneously with or after the R/W = V IL transition, the outputs remain in the HIGH impedance state.
6. Timing depends on which enable signal is asserted last, CE , R/ W , or byte control.
7. This parameter is guaranteed by device characterization, but is not production tested. Transition is measured 0mV from steady state with Output Test Load
(Figure 2).
8. If OE = V IL during R/ W controlled write cycle, the write pulse width must be the larger of t WP or (t WZ + t DW ) to allow the I/O drivers to turn off and data to be
placed on the bus for the required t DW . If OE = V IH during an R/ W controlled write cycle, this requirement does not apply and the write pulse can be as short as the
specified t WP .
9. To access RAM, CE = V IL , UB or LB = V IL , and SEM = V IH . To access Semaphore, CE = V IH or UB & LB = V IH , and SEM = V IL . t EW must be met
for either condition.
12
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| IDT7025S55PF8 | 功能描述:IC SRAM 128KBIT 55NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:71V67703S75PFGI |
| IDT7025S70GB | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 128KBIT 70NS 84PGA |
| IDT70261L15PF | 功能描述:IC SRAM 256KBIT 15NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT70261L15PF8 | 功能描述:IC SRAM 256KBIT 15NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT70261L15PFG | 功能描述:IC SRAM 256KBIT 15NS 100TQFP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,500 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（单线） 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 供应商设备封装:8-MSOP 包装:带卷 (TR) |
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