- 您现在的位置：买卖IC网 > PDF目录4011 > IDT7052L25PF (IDT, Integrated Device Technology Inc)IC SRAM 16KBIT 25NS 120TQFP PDF资料下载
参数资料
| 型号： | IDT7052L25PF |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 10/11页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 16KBIT 25NS 120TQFP |
| 标准包装： | 45 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 四端口，异步 |
| 存储容量： | 16K (2K x 8) |
| 速度： | 25ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 120-LQFP |
| 供应商设备封装： | 120-TQFP（14x14） |
| 包装： | 托盘 |
| 其它名称： | 7052L25PF |
IDT7052S/L
High-Speed 2K x 8 FourPort? Static RAM
Military, Industrial and Commercial Temperature Ranges
Timing Waveform of Write with Port-to-Port Read (1,2,3)
t WC
ADDR "A"
MATCH
t WP
R/ W "A"
t DW
t DH
NOTES:
DATA IN"A"
ADDR "B"
DATA "B"
VALID
MATCH
t WDD
t DDD
VALID
2674 drw 11
1. Assume BUSY input = V IH and CE = V IL for the writing port.
2. OE = V IL for the reading ports.
3. All timing is the same for left and right ports. Port "A" may be either of the four ports and Port "B" is any other port.
Timing Waveform of Write with BUSY Input
t WP
R/ W "A"
t WB
BUSY "B"
R/ W "B"
NOTES:
1. BUSY is asserted on Port "B" blocking R/ W "B" until BUSY "B" goes HIGH.
(1)
t WH
2674 drw 12
,
Functional Description
Truth Table I – Read/Write Control (3)
The IDT7052 provides four ports with separate control, address, and
I/O pins that permit independent access for reads or writes to any location
in memory. These devices have an automatic power down feature
controlled by CE . The CE controls on-chip power down circuitry that
permits the respective port to go into standby mode when not selected ( CE
= V IH ). When a port is enabled, access to the entire memory array is
permitted. Each port has its own Output Enable control ( OE ). In the read
mode, the port’s OE turns on the output drivers when set LOW. READ/
WRITE conditions are illustrated in the table below.
R/ W
X
X
L
H
X
CE
H
H
L
L
X
Any Port (1)
OE
X
X
X
L
H
D 0-7
Z
Z
DATA IN
DATA OUT
Z
Function
Port Deselected: Power-Down
CE P1 = CE P2 = CE P3 = CE P4 =V IH
Power Down Mode I SB or I SB1
Data on port written into memory (2)
Data in memory output on port
Outputs Disabled
NOTES:
2674 tbl 11
1. "H" = V IH , "L" = V IL , "X" = Don’t Care, "Z "= High Impedance
2. If BUSY = V IL , write is blocked.
3. For valid write operation, no more than one port can write to the same address
location at the same time.
10
6.42
相关PDF资料 |
PDF描述 |
|---|---|
| IDT70V9199L12PF8 | IC SRAM 1.125MBIT 12NS 100TQFP |
| IDT70V9099L12PF8 | IC SRAM 1MBIT 12NS 100TQFP |
| IDT709289L12PF8 | IC SRAM 1MBIT 12NS 100TQFP |
| IDT709099L12PF8 | IC SRAM 1MBIT 12NS 100TQFP |
| EMC36DTEF | CONN EDGECARD 72POS .100 EYELET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT7052L25PF8 | 功能描述:IC SRAM 16KBIT 25NS 120TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT7052L25PFGI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 16KBIT 25NS 120TQFP |
| IDT7052L25PFGI8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 16KBIT 25NS 120TQFP |
| IDT7052L25PFI | 功能描述:IC SRAM 16KBIT 25NS 120TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT7052L25PFI8 | 功能描述:IC SRAM 16KBIT 25NS 120TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
发布紧急采购，3分钟左右您将得到回复。