参数资料
型号: IDT7052S20G
厂商: INTEGRATED DEVICE TECHNOLOGY INC
元件分类: SRAM
英文描述: 2K X 8 FOUR-PORT SRAM, 20 ns, CPGA108
封装: 1.210 X 1.210 INCH, 0.160 INCH HEIGHT, PGA-108
文件页数: 2/11页
文件大小: 123K
代理商: IDT7052S20G
6.42
IDT7052S/L
High-Speed 2K x 8 FourPort Static RAM
Military, Industrial and Commercial Temperature Ranges
10
Timing Waveform of Write with Port-to-Port Read(1,2,3)
Functional Description
The IDT7052 provides four ports with separate control, address, and
I/O pins that permit independent access for reads or writes to any location
in memory. These devices have an automatic power down feature
controlled by
CE. The CE controls on-chip power down circuitry that
permitstherespectiveporttogointostandbymodewhennotselected(
CE
= VIH). When a port is enabled, access to the entire memory array is
permitted. Each port has its own Output Enable control (
OE). In the read
mode, the port’s
OE turns on the output drivers when set LOW. READ/
WRITE conditions are illustrated in the table below.
Timing Waveform of Write with BUSY Input
NOTES:
1.
BUSY is asserted on Port "B" blocking R/W"B" until BUSY"B" goes HIGH.
Truth Table I – Read/Write Control(3)
NOTES:
1. "H" = VIH, "L" = VIL, "X" = Don’t Care, "Z "= High Impedance
2. If
BUSY = VIL, write is blocked.
3. For valid write operation, no more than one port can write to the same address
location at the same time.
NOTES:
1. Assume
BUSY input = VIH and CE = VIL for the writing port.
2.
OE = VIL for the reading ports.
3. All timing is the same for left and right ports. Port "A" may be either of the four ports and Port "B" is any other port.
2674 drw 11
ADDR"A"
tWC
DATA"B"
MATCH
tWP
R/
W"A"
DATAIN"A"
ADDR"B"
tDH
VALID
MATCH
VALID
tDDD
tWDD
tDW
2674 drw 12
R/
W"A"
BUSY"B"
tWP
tWH
tWB
R/
W"B"
(1)
,
Any Port
(1)
R/
W
CE
OE
D0-7
Function
X
H
X
Z
Port Deselected: Power-Down
XH
X
Z
CEP1=CEP2=CEP3=CEP4=VIH
Power Down Mode ISB or ISB1
LL
X
DATAIN
Data on port written into memory
(2)
HL
L
DATAOUT
Data in memory output on port
X
H
Z
Outputs Disabled
2674 tbl 11
相关PDF资料
PDF描述
IS61NVP12836B-200B3 128K X 36 ZBT SRAM, 3.1 ns, PBGA165
IDT7202SA120DB 1K X 9 OTHER FIFO, 120 ns, CDIP28
IDT7202SA25L8 1K X 9 OTHER FIFO, 25 ns, CQCC32
IDT7202SA35SO8 1K X 9 OTHER FIFO, 35 ns, PDSO28
ILUI-65656V-80SHXXX 32K X 8 STANDARD SRAM, 80 ns, PDSO28
相关代理商/技术参数
参数描述
IDT7052S20PF 功能描述:IC SRAM 16KBIT 20NS 120TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT7052S20PF8 功能描述:IC SRAM 16KBIT 20NS 120TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT7052S20PQF 功能描述:IC SRAM 16KBIT 20NS 132QFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT7052S25G 功能描述:IC SRAM 16KBIT 25NS 108PGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT7052S25PF 功能描述:IC SRAM 16KBIT 25NS 120TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8