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| 型号： | IDT7052S25G |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 8/11页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 16KBIT 25NS 108PGA |
| 标准包装： | 3 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 四端口，异步 |
| 存储容量： | 16K (2K x 8) |
| 速度： | 25ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 108-BSPGA |
| 供应商设备封装： | 108-PGA（30.48x30.48） |
| 包装： | 托盘 |
| 其它名称： | 7052S25G |
IDT7052S/L
High-Speed 2K x 8 FourPort? Static RAM
Military, Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage (7)
7052X20
Com'l Only
7052X25
Com'l &
Military
7052X35
Com'l &
Military
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
WRITE CYCLE
Write Pulse Width
Write Enable to Output in High-Z
t WC
t EW
t AW
t AS
t WP
t WR
t DW
t HZ
t DH
t WZ
Write Cycle Time
Chip Enable to End-of-Write (3)
Address Valid to End-of-Write
Address Set-up Time
(3)
Write Recovery Time
Data Valid to End-of-Write
Output High-Z Time (1,2)
Data Hold Time
(1,2)
20
15
15
0
15
0
15
____
0
____
____
____
____
____
____
____
____
15
____
12
25
20
20
0
20
0
15
____
0
____
____
____
____
____
____
____
____
15
____
15
35
30
30
0
30
0
20
____
0
____
____
____
____
____
____
____
____
15
____
15
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t OW
Output Active from End-of-Write
(1,2)
0
____
0
____
0
____
ns
t WDD
t WDD
Write Pulse to Data Delay (4)
Write Data Valid to Read Data Delay (4)
____
____
35
30
____
____
45
35
____
____
55
45
ns
ns
BUSY INPUT TIMING
Write Hold After BUSY
t WB
t WH
Write to BUSY (5)
(6)
0
15
____
____
0
15
____
____
0
20
____
____
ns
ns
NOTES:
2674 tbl 10
1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization but is not production tested.
3. If OE = V IL during a R/ W controlled write cycle, the write pulse width must be the larger of t WP or (t WZ + t DW ) to allow the I/O drivers
to turn off data to be placed on the bus for the required t DW . If OE = V IH during an R/W controlled write cycle, this requirement
does not apply and the write pulse can be as short as the specified t WP . Specified for OE = V IH (refer to “Timing Waveform of Write Cycle”, Note 8).
4. Port-to-port delay through RAM cells from writing port to reading port, refer to “Timing Waveform of Write with Port-to-Port Read”.
5. To ensure that the write cycle is inhibited on port "A" during contention from Port "B". Port "A" may be any of the four ports and Port "B" is any other port.
6. To ensure that a write cycle is completed on port "A" after contention from Port "B". Port "A" may be any of the four ports and Port "B" is any other port.
7. 'X' in part number indicates power rating.
8
6.42
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| IDT7052S25PF | 功能描述:IC SRAM 16KBIT 25NS 120TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT7052S25PF8 | 功能描述:IC SRAM 16KBIT 25NS 120TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，异步 存储容量:128K（8K x 16） 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:70V25S15PF |
| IDT7052S25PQF | 功能描述:IC SRAM 16KBIT 25NS 132QFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT7052S30GB | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 16KBIT 30NS 108PGA |
| IDT7052S35G | 功能描述:IC SRAM 16KBIT 35NS 108PGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
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