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参数资料
| 型号： | IDT7052S25PF |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 16KBIT 25NS 120TQFP |
| 标准包装： | 45 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 四端口，异步 |
| 存储容量： | 16K (2K x 8) |
| 速度： | 25ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 120-LQFP |
| 供应商设备封装： | 120-TQFP（14x14） |
| 包装： | 托盘 |
| 其它名称： | 7052S25PF |
Features
HIGH-SPEED
2K x 8 FourPort TM
STATIC RAM
IDT7052S/L
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High-speed access
– Commercial: 20/25/35ns (max.)
– Industrial: 25ns (max.)
– Military: 25/35ns (max.)
Low-power operation
– IDT7052S
Active: 750mW (typ.)
Standby: 7.5mW (typ.)
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Battery backup operation—2V data retention
TTL-compatible; single 5V (±10%) power supply
Available in 120 pin and 132 pin Thin Quad Flatpacks and
108 pin PGA
Military product compliant to MIL-PRF-38535 QML
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Green parts available, see ordering information
– IDT7052L
Active: 750mW (typ.)
Description
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Standby: 1.5mW (typ.)
True FourPort memory cells which allow simultaneous
access of the same memory locations
Fully asynchronous operation from each of the four ports:
P1, P2, P3, P4
Versatile control for write-inhibit: separate BUSY input to
control write-inhibit for each of the four ports
The IDT7052 is a high-speed 2K x 8 FourPort? Static RAM designed
to be used in systems where multiple access into a common RAM is
required. This FourPort Static RAM offers increased system performance
in multiprocessor systems that have a need to communicate in real time and
also offers added benefit for high-speed systems in which multiple access
is required in the same cycle.
Functional Block Diagram
R/ W P1
CE P1
OE P1
R/ W P4
CE P4
OE P4
I/O 0P1 -I/O 7P1
COLUMN
I/O
COLUMN
I/O
I/O 0P4 -I/O 7P4
BUSY P1
PORT 1
PORT 4
BUSY P4
A 0P1 - A 10P1
ADDRESS
DECODE
LOGIC
MEMORY
ADDRESS
DECODE
LOGIC
A 0P4 - A 10P4
ARRAY
PORT 2
PORT 3
A 0P2 - A 10P2
ADDRESS
DECODE
ADDRESS
DECODE
A 0P3 - A 10P3
BUSY P2
LOGIC
LOGIC
BUSY P3
I/O 0P2 -I/O 7P2
OE P2
CE P2
R/ W P2
COLUMN
I/O
COLUMN
I/O
I/O 0P3 -I/O 7P3
OE P3
CE P3
R/ W P3
2674 drw 01
JANUARY 2009
1
?2009 Integrated Device Technology, Inc.
DSC 2674/13
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT7052S25PF8 | 功能描述:IC SRAM 16KBIT 25NS 120TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，异步 存储容量:128K（8K x 16） 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:70V25S15PF |
| IDT7052S25PQF | 功能描述:IC SRAM 16KBIT 25NS 132QFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT7052S30GB | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 16KBIT 30NS 108PGA |
| IDT7052S35G | 功能描述:IC SRAM 16KBIT 35NS 108PGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT7052S35GB | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 16KBIT 35NS 108PGA |
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