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参数资料
| 型号： | IDT709349L7PF8 |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 15/16页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 72KBIT 7NS 100TQFP |
| 标准包装： | 750 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，同步 |
| 存储容量： | 72K（4K x 18） |
| 速度： | 7ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 100-LQFP |
| 供应商设备封装： | 100-TQFP（14x14） |
| 包装： | 带卷 (TR) |
| 其它名称： | 709349L7PF8 |
IDT709359/49L
High-Speed 8/4K x 18 Synchronous Pipelined Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
A Functional Description
The IDT709359/49 provides a true synchronous Dual-Port Static
RAM interface. Registered inputs provide minimal set-up and hold
times on address, data, and all critical control inputs. All internal
registers are clocked on the rising edge of the clock signal, however,
the self-timed internal write pulse is independent of the LOW to HIGH
transition of the clock signal.
An asynchronous output enable is provided to ease asynchronous
bus interfacing. Counter enable inputs are also provided to stall the
operation of the address counters for fast interleaved memory appli-
cations.
CE 0 = V IH or CE 1 = V IL for one clock cycle will power down the
internal circuitry to reduce static power consumption. Multiple chip
enables allow easier banking of multiple IDT709359/49's for depth
expansion configurations. When the Pipelined output mode is enabled, two
cycles are required with CE 0 = V IL and CE 1 = V IH to re-activate the outputs.
A 13 /A 12(1)
Depth and Width Expansion
The IDT709359/49 features dual chip enables (refer to Truth Table
I) in order to facilitate rapid and simple depth expansion with no require-
ments for external logic. Figure 4 illustrates how to control the various chip
enables in order to expand two devices in depth.
The IDT709359/49 can also be used in applications requiring ex-
panded width, as indicated in Figure 4. Since the banks are allocated at
the discretion of the user, the external controller can be set up to drive the
input signals for the various devices as required to allow for 36-bit
or wider applications.
IDT709359/49
CE 0
IDT709359/49
CE 0
Control Inputs
CE 1
V CC
Control Inputs
CE 1
V CC
IDT709359/49
Control Inputs
CE 1
CE 0
IDT709359/49
Control Inputs
CE 1
CE 0
CNTRST
CLK
ADS
CNTEN
NOTE:
1. A 13 is for IDT709359, A 12 is for IDT709349.
5633 drw 19
Figure 4. Depth and Width Expansion with IDT709359/49
15
6.42
R/ W
LB , UB
OE
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT709349L7PFGI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 72KBIT 7.5NS 100TQFP |
| IDT709349L7PFGI8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 72KBIT 7.5NS 100TQFP |
| IDT709349L7PFI | 功能描述:IC SRAM 72KBIT 7NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，异步 存储容量:128K（8K x 16） 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:70V25S15PF |
| IDT709349L7PFI8 | 功能描述:IC SRAM 72KBIT 7NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:71V67703S75PFGI |
| IDT709349L9BF | 功能描述:IC SRAM 72KBIT 9NS 100FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:71V67703S75PFGI |
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