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参数资料
| 型号： | IDT70P258L55BYGI8 |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 2/23页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 128KBIT 55NS 100BGA |
| 标准包装： | 3,000 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 128K（8K x 16） |
| 速度： | 55ns |
| 接口： | 并联 |
| 电源电压： | 1.7 V ~ 1.9 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 100-VFBGA |
| 供应商设备封装： | 100-CABGA（6x6） |
| 包装： | 带卷 (TR) |
| 其它名称： | 70P258L55BYGI8 |
IDT70P258/248L
Low Power 1.8V 8K/4K x 16 Dual-Port Static RAM
Description
The IDT70P258/248 is a very low power 8K/4K x 16 Dual-Port
Static RAM. The IDT70P258/248 is designed to be used as a stand-alone
128/64K-bit Dual-Port SRAM or as a combination MASTER/SLAVE Dual-
Port SRAM for 32-bit-or-more word systems. Using the IDT MASTER/
SLAVE Dual-Port SRAM approach in 32-bit or wider memory system
applications results in full-speed, error-free operation without the need for
additional discrete logic.
This device provides two independent ports with separate control,
Industrial Temperature Range
address, and I/O pins that permit independent, asynchronous access for
reads or writes to any location in memory. An automatic power down
feature controlled by CE permits the on-chip circuitry of each port to enter
a very low standby power mode.
Fabricated using IDT’s CMOS high-performance technology,
these devices typically operate on only 27mW of power.
The IDT70P258/248 is packaged in a 100 ball 0.5mm- pitch Ball
Grid Array. The package is a 1mm thick and designed to fit in wireless
handset applications.
Pin Configurations (2,3,4)
70P258/248BY
BY-100
100-Ball 0.5mm Pitch BGA
09/04/03
Top View (5)
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A 5R
A 8R
A 11R
UB R
Vss
SEM R I/O 15R I/O 12R I/O 10R
Vss
B1
B2
B3
B4
B5
B6
B7
B8
B9
B10
A 3R
A 4R
A 7R
A 9R
CE R
R/ W R
OE R
V DD
I/O 9R I/O 6R
C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
A 0R
A 1R
A 2R
A 6R
LB R
IRR 1
I/O 14R I/O 11R I/O 7R
Vss
D1
D2
D3
D4
D5
D6
D7
D8
D9
D10
ODR 4 ODR 2 BUSY R INT R
A 10R
A 12R (1)
I/O 13R I/O 8R
I/O 5R
I/O 2R
E1
Vss
F1
E2
M/ S
F2
E3
ODR 3
F3
E4
INT L
F4
E5
Vss
F5
E6
Vss
F6
E7
I/O 4R
F7
E8
V DD
F8
E9
I/O 1R
F9
E10
Vss
F10
SFEN ODR 1 BUSY L
A 1L
V DD
Vss
I/O 3R
I/O 0R I/O 15L V DDQL
G1
G2
G3
G4
G5
G6
G7
G8
G9
G10
ODR 0
A 2L
A 5L
A 12L (1)
OE L
I/O 3L I/O 11L I/O 12L I/O 14L I/O 13L
,
H1
H2
H3
H4
H5
H6
H7
H8
H9
H10
A 0L
A 4L
A 9L
LB L
CE L
I/O 1L V DDQL
NC
NC
I/O 10L
J1
A 3L
K1
J2
A 7L
K2
J3
A 10L
K3
J4
IRR 0
K4
J5
V DD
K5
J6
Vss
K6
J7
I/O 4L
K7
J8
I/O 6L
K8
J9
I/O 8L
K9
J10
I/O 9L
K10
A 6L
A 8L
A 11L
UB L
SEM L R/ W L
I/O 0L
I/O 2L I/O 5L
I/O 7L
5675 drw 02b
NOTES:
1. A 12X is a NC for IDT70P248.
2. All V DD pins must be connected to power supply.
3. All V SS pins must be connected to ground supply.
4. BY100-1 package body is approximately 6mm x 6mm x 1mm, ball pitch 0.5mm.
5. This package code is used to reference the package diagram.
6. This text does not indicate orientation of the actual part-marking.
6.42
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT70P258L55BYI | 功能描述:IC SRAM 128KBIT 55NS 100BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT70P258L55BYI8 | 功能描述:IC SRAM 128KBIT 55NS 100BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，异步 存储容量:128K（8K x 16） 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:70V25S15PF |
| IDT70P259L65BYGI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 128KBIT 65NS 100FPBGA |
| IDT70P259L65BYGI8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 128KBIT 65NS 100FPBGA |
| IDT70P259L90BYGI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 128KBIT 90NS 100FPBGA |
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