参数资料
型号: IDT70T3719M
厂商: Integrated Device Technology, Inc.
英文描述: HIGH-SPEED 2.5V 256/128K x 72 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
中文描述: 高速与3.3V 2.5V的256/128K × 72 SYNCHRONOU S双,端口静态RAM或2.5V的接口
文件页数: 8/25页
文件大小: 316K
代理商: IDT70T3719M
6.42
IDT70T3719/99M
High-Speed 2.5V 256/128K x 72 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
Advanced
8
DC Elec tric al Charac teristic s Over the Operating
Temperature and S upply Voltage Range
(3)
(V
DD
= 2.5V ± 100mV )
NOTES:
1. At f = f
MAX
, address and control lines (except Output Enable) are cycling at the maximumfrequency clock cycle of 1/t
CYC
, using "AC TEST CONDITIONS".
2. f = 0 means no address, clock, or control lines change. Applies only to input at CMOS level standby.
3. Port "A" may be either left or right port. Port "B" is the opposite fromport "A".
4. V
DD
= 2.5V, T
A
= 25°C for Typ, and are not production tested. I
DD DC
(f=0)
= 30mA (Typ).
5.
CE
X
= V
IL
means
CE
0X
= V
IL
and CE
1X
= V
IH
CE
X
= V
IH
means
CE
0X
= V
IH
or CE
1X
= V
IL
CE
X
< 0.2V means
CE
0X
< 0.2V and CE
1X
> V
DD
- 0.2V
CE
X
> V
DD
- 0.2V means
CE
0X
> V
DD
- 0.2V or CE
1X
- 0.2V
"X" represents "L" for left port or "R" for right port.
6. I
SB
1
, I
SB
2
and
I
SB
4
will all reach full standby levels
(
I
SB
3)
on the appropriate port(s) if ZZ
L
and/or ZZ
R
= V
IH
.
70T3719/99M
S166
Com'l
Only
70T3719/99M
S133
Com'l
& Ind
Symbol
Parameter
Test Condition
Version
Typ.
(4)
Max.
Typ.
(4)
Max.
Unit
I
DD
Dynamc Operating
Current (Both
Ports Active)
CE
L
and
CE
R
= V
IL
,
Outputs Disabled,
f = f
MAX
(1)
COML
S
640
900
520
740
mA
IND
S
___
___
520
900
I
SB1
(6)
Standby Current
(Both Ports - TTL
Level Inputs)
CE
L
=
CE
R
= V
IH
f = f
MAX
(1)
COML
S
350
460
280
380
mA
IND
S
___
___
280
470
I
SB2
(6)
Standby Current
(One Port - TTL
Level Inputs)
CE
"A"
= V
IL
and
CE
"B"
= V
IH
(5)
Active Port Outputs Disabled,
f=f
MAX
(1)
COML
S
500
650
400
500
mA
IND
S
___
___
400
620
I
SB3
Full Standby Current
(Both Ports - CMOS
Level Inputs)
Both Ports
CE
L
and
CE
R
> V
DDQ
- 0.2V, V
IN
> V
DDQ
- 0.2V
or V
IN
< 0.2V, f = 0
COML
S
12
20
12
20
mA
IND
S
___
___
12
25
I
SB4
(6)
Full Standby Current
(One Port - CMOS
Level Inputs)
CE
"A"
< 0.2V and
CE
"B"
> V
DDQ
- 0.2V
(5)
V
IN
> V
DDQ
- 0.2V or V
IN
< 0.2V
Active Port, Outputs Disabled, f = f
MAX
(1)
COML
S
500
650
400
500
mA
IND
S
___
___
400
620
Izz
Sleep Mode Current
(Both Ports - TTL
Level Inputs)
ZZ
L =
ZZ
R =
V
IH
f=f
MAX
(1)
COML
S
12
20
12
20
mA
IND
S
___
___
12
25
5687 tbl 10
相关PDF资料
PDF描述
IDT70T3719MS133BBG HIGH-SPEED 2.5V 256/128K x 72 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70T3719MS133BBGI HIGH-SPEED 2.5V 256/128K x 72 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70T3719MS166BBG HIGH-SPEED 2.5V 256/128K x 72 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70T3719MS166BBGI HIGH-SPEED 2.5V 256/128K x 72 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70T3799M HIGH-SPEED 2.5V 256/128K x 72 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
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