- 您现在的位置：买卖IC网 > PDF目录22177 > IDT70T631S12DDI (IDT, Integrated Device Technology Inc)IC SRAM 4MBIT 12NS 144TQFP PDF资料下载
参数资料
| 型号： | IDT70T631S12DDI |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 13/27页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 4MBIT 12NS 144TQFP |
| 产品变化通告： | Product Discontinuation 20/Aug/2008 |
| 标准包装： | 6 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 4.5M（256K x 18） |
| 速度： | 12ns |
| 接口： | 并联 |
| 电源电压： | 2.4 V ~ 2.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 144-LQFP 裸露焊盘 |
| 供应商设备封装： | 144-TQFP（20x20） |
| 包装： | 托盘 |
| 其它名称： | 70T631S12DDI |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页当前第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页
IDT70T633/1S
High-Speed 2.5V 512/256K x 18 Asynchronous Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
RapidWrite Mode Write Cycle
Unlike other vendors' Asynchronous Random Access Memories,
the IDT70T633/1 is capable of performing multiple back-to-back write
operations without having to pulse the R/ W , CE , or BE n signals high
during address transitions. This RapidWrite Mode functionality allows the
system designer to achieve optimum back-to-back write cycle performance
without the difficult task of generating narrow reset pulses every cycle,
simplifying system design and reducing time to market.
During this new RapidWrite Mode, the end of the write cycle is now
defined by the ending address transition, instead of the R/ W or CE or BE n
transition to the inactive state. R/ W , CE , and BE n can be held active
throughout the address transition between write cycles.
Care must be taken to still meet the Write Cycle time (t WC ), the time in
which the Address inputs must be stable. Input data setup and hold times
(t DW and t DH ) will now be referenced to the ending address transition. In
this RapidWrite Mode the I/O will remain in the Input mode for the duration
of the operations due to R/ W being held low. All standard Write Cycle
specifications must be adhered to. However, t AS and t WR are only
applicable when switching between read and write operations. Also,
there are two additional conditions on the Address Inputs that must also
be met to ensure correct address controlled writes. These specifications,
the Allowable Address Skew (t AAS ) and the Address Rise/Fall time (t ARF ),
must be met to use the RapidWrite Mode. If these conditions are not met
there is the potential for inadvertent write operations at random intermediate
locations as the device transitions between the desired write addresses.
Timing Waveform of Write Cycle No. 3, RapidWrite Mode Write Cycle (1,3)
t WC
t EW
ADDRESS
CE or SEM (6)
t WC
(2)
(4)
t WC
BE n
t WR
R/ W
t WP
(5)
t WZ
(5)
t OW
DATA OUT
t DW
t DH
t DW
t DH
t DW
t DH
DATA IN
5670 drw 08
NOTES:
1. OE = V IL for this timing waveform as shown. OE may equal V IH with same write functionality; I/O would then always be in High-Z state.
2. A write occurs during the overlap (t EW or t WP ) of a CE = V IL, BE n = V IL , and a R/ W = V IL for memory array writing cycle. The last transition LOW of CE , BE n, and
R/ W initiates the write sequence. The first transition HIGH of CE , BE n, and R/ W terminates the write sequence.
3. If the CE or SEM = V IL transition occurs simultaneously with or after the R/ W = V IL transition, the outputs remain in the High-impedance state.
4. The timing represented in this cycle can be repeated multiple times to execute sequential RapidWrite Mode writes.
5. This parameter is guaranteed by device characterization, but is not production tested. Transition is measured 0mV from steady state with the Output Test Load
(Figure 1).
6. To access RAM, CE = V IL and SEM = V IH . To access semaphore, CE = V IH and SEM = V IL . t EW must be met for either condition. CE = V IL when CE 0 = V IL
and CE 1 = V IH . CE = V IH when CE 0 = V IH and/or CE 1 = V IL .
13
相关PDF资料 |
PDF描述 |
|---|---|
| ECM12DSUS | CONN EDGECARD 24POS DIP .156 SLD |
| KA7912ATU | IC REG LDO -12V 1A TO-220 |
| RCA50DTAT-S664 | CONN EDGECARD 100PS R/A .125 SLD |
| AD8436BCPZ-RL | IC CONV TRUE RMS-DC LP 20LFCSP |
| V110A48C300B | CONVERTER MOD DC/DC 48V 300W |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT70T631S15BC | 功能描述:IC SRAM 4MBIT 15NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70T631S15BC8 | 功能描述:IC SRAM 4MBIT 15NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70T631S15BF | 功能描述:IC SRAM 4MBIT 15NS 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70T631S15BF8 | 功能描述:IC SRAM 4MBIT 15NS 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70T631S15DD | 功能描述:IC SRAM 4MBIT 15NS 144TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步，DDR II 存储容量:18M（1M x 18） 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA（13x15） 包装:托盘 其它名称:71P71804S200BQ |
发布紧急采购，3分钟左右您将得到回复。