参数资料
型号: IDT70T633S10BC
厂商: IDT, Integrated Device Technology Inc
文件页数: 27/27页
文件大小: 0K
描述: IC SRAM 9MBIT 10NS 256BGA
标准包装: 6
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,异步
存储容量: 9M(512K x 18)
速度: 10ns
接口: 并联
电源电压: 2.4 V ~ 2.6 V
工作温度: 0°C ~ 70°C
封装/外壳: 256-LBGA
供应商设备封装: 256-CABGA(17x17)
包装: 托盘
其它名称: 70T633S10BC
IDT70T633/1S
High-Speed 2.5V 512/256K x 18 Asynchronous Dual-Port Static RAM
Datasheet Document History:
Industrial and Commercial Temperature Ranges
04/25/03:
Initial Datasheet
10/01/03:
10/20/03:
04/21/04:
01/05/06:
07/25/08:
01/19/09:
04/20/10:
10/15/11:
6/18/12
Page 9
Page 9
Page 9,11,15,
17&25
Page 10
Page 11,15 & 17
Page 11
Page 12
Page 14
Page 1& 25
Page 1, 14 & 15
Page 15
Page 1
Page 27
Page 9
Page 27
Page 2,13
Page 26
Page 1,2,8,10,
16,18,26
Added 8ns speed DC power numbers to DC Electrical Characteristics Table
Updated DC power numbers for 10, 12 & 15ns speeds in the DC Electrical Characteristics Table
Added footnote that indicates that 8ns speed is available in BF-208 and BC-256 packages only
Added Capacitance Derating Drawing
Added 8ns AC timing numbers to the AC Electrical Characteristics Tables
Added t SOE and t LZOB to the AC Read Cycle Electrical Characteristics Table
Added t LZOB to the Waveform of Read Cycles Drawing
Added t SOE to Timing Waveform of Semaphore Read after Write Timing, Either Side Drawing
Added 8ns speed grade and 10ns I-temp to features and to ordering information
Added RapidWrite Mode Write Cycle text and waveforms
Corrected t ARF to 1.5V/ns Min.
Removed Preliminary status from entire datasheet
Added green availability to features
Added green indicator to ordering information
Corrected a typo in the DC Chars table
Removed "IDT" from orderable part number
Removed the DD 144-pin TQFP (DD-144) Thin Quad Flatpack per PDN: F-08-01
Corrected 70T651/9 to 70T633/1
Updated ordering information to include tube or tray and tape & reel.
Removed 8ns from datasheet to match pricebook.
CORPORATE HEADQUARTERS
6024 Silver Creek Valley Road
San Jose, CA 95138
for SALES:
800-345-7015 or 408-284-8200
fax: 408-284-2775
for Tech Support:
408-284-2794
DualPortHelp@idt.com
www.idt.com
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
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IDT70T633S10BC8 功能描述:IC SRAM 9MBIT 10NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70T633S10BCGI 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 9MBIT 10NS 256CABGA
IDT70T633S10BCI 功能描述:IC SRAM 9MBIT 10NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70T633S10BCI8 功能描述:IC SRAM 9MBIT 10NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70T633S10BF 功能描述:IC SRAM 9MBIT 10NS 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)