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参数资料
| 型号： | IDT70T9159L |
| 厂商： | Integrated Device Technology, Inc. |
| 英文描述： | HIGH-SPEED 2.5V 16/8K X 9 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM |
| 中文描述： | 高速2.5V的16/8K × 9同步流水线双端口静态RAM |
| 文件页数： | 15/16页 |
| 文件大小： | 199K |
| 代理商： | IDT70T9159L |
6.42
IDT70T9169/59L
High-Speed 2.5V 16/8K x 9 Synchronous Pipelined Dual-Port Static RAM Industrial and Commercial Temperature Ranges
15
Preliminary
4
The IDT70T9169/59 provides a true synchronous Dual-Port Static
RAMinterface. Registered inputs provide mnimal set-up and hold
times on address, data, and all critical control inputs. All internal
registers are clocked on the rising edge of the clock signal, however,
the self-timed internal write pulse is independent of the LOW to HIGH
transition of the clock signal.
An asynchronous output enable is provided to ease asynchronous
bus interfacing. Counter enable inputs are also provided to stall the
operation of the address counters for fast interleaved memory appli-
cations.
CE
0
= V
IH
or CE
1
= V
IL
for one clock cycle will power down the
internal circuitry to reduce static power consumption. Multiple chip
enables allow easier banking of multiple IDT70T9169/59's for depth
expansion configurations. When the Pipelined output mode is enabled, two
cycles are required to get valid data on the outputs.
&+-+&.6
The IDT70T9169/59 features dual chip enables (refer to Truth Table
I) in order to facilitate rapid and simple depth expansion with no require-
ments for external logic. Figure 4 illustrates how to control the various chip
enables in order to expand two devices in depth.
The IDT70T9169/59 can also be used in applications requiring
expanded width, as indicated in Figure 4. Since the banks are allocated
at the discretion of the user, the external controller can be set up to drive
the input signals for the various devices as required to allow for 18-bit
or wider applications.
Figure 4. Depth and Width Expansion with IDT70T9169/59
5654 drw 19
IDT70T9169/59
CE
0
CE
1
CE
1
CE
0
CE
0
CE
1
A
14
/A
13(1)
CE
1
CE
0
V
DD
V
DD
IDT70T9169/59
IDT70T9169/59
IDT70T9169/59
Control Inputs
Control Inputs
Control Inputs
Control Inputs
CNTRST
CLK
ADS
CNTEN
R/
W
OE
NOTE:
1. A
14
is for IDT70T9169, A
13
is for IDT70T9159.
相关PDF资料 |
PDF描述 |
|---|---|
| IDT70T9169 | HIGH-SPEED 2.5V 16/8K X 9 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM |
| IDT70T9169L7BF1 | HIGH-SPEED 2.5V 16/8K X 9 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM |
| IDT70T9169L7PF | HIGH-SPEED 2.5V 16/8K X 9 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM |
| IDT70T9169L7PF1 | HIGH-SPEED 2.5V 16/8K X 9 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM |
| IDT70T9169L9BF | HIGH-SPEED 2.5V 16/8K X 9 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT70T9159L12BF | 功能描述:IC SRAM 72KBIT 12NS 100FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，异步 存储容量:128K（8K x 16） 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:70V25S15PF |
| IDT70T9159L12PF | 功能描述:IC SRAM 72KBIT 12NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，异步 存储容量:128K（8K x 16） 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:70V25S15PF |
| IDT70T9159L12PF8 | 功能描述:IC SRAM 72KBIT 12NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，异步 存储容量:128K（8K x 16） 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:70V25S15PF |
| IDT70T9159L9BF | 功能描述:IC SRAM 72KBIT 9NS 100FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT70T9159L9PF | 功能描述:IC SRAM 72KBIT 9NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
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