参数资料
型号: IDT70V06S55PF
厂商: IDT, Integrated Device Technology Inc
文件页数: 5/23页
文件大小: 0K
描述: IC SRAM 128KBIT 55NS 64TQFP
标准包装: 45
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,异步
存储容量: 128K (16K x 8)
速度: 55ns
接口: 并联
电源电压: 3 V ~ 3.6 V
工作温度: 0°C ~ 70°C
封装/外壳: 64-LQFP
供应商设备封装: 64-TQFP(14x14)
包装: 托盘
其它名称: 70V06S55PF
IDT70V06S/L
High-Speed 3.3V 16K x 8 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Absolute Maximum Ratings (1)
Symbol Rating Commercial
Unit
Maximum Operating Temperature
and Supply Voltage (1)
& Industrial
Grade
Ambient Temperature
GND
V DD
V TERM (2)
Terminal Voltage
with Respect
-0.5 to +4.6
V
Commercial
0 O C to +70 O C
0V
3.3V + 0.3V
to GND
Industrial
-40 O C to +85 O C
0V
3.3V + 0.3V
T BIAS
T STG
Temperature
Under Bias
Storage
Temperature
-55 to +125
-65 to +150
o
o
C
C
2942 tbl 05
NOTE:
1. This is the parameter T A . This is the "instant on" case temperature.
I OUT
DC Output
50
mA
Current
2942 tbl 04
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
Recommended DC Operating
Conditions
indicated in the operational sections of this specification is not implied. Exposure
Symbol
Parameter
Min.
Typ.
Max.
Unit
to absolute maximum rating conditions for extended periods may affect
reliability.
V DD
Supply Voltage
3.0
3.3
3.6
V
2. V TERM must not exceed V DD + 0.3V.
V SS
Ground
0
0
0
V
Capacitance (T A = +25°C, f = 1.0MHz)
V IH
Input High Voltage
2.0
____
V DD +0.3 (2)
V
Parameter
-0.3
Symbol
(1)
Conditions
Max.
Unit
V IL
Input Low Voltage
(1)
____
0.8
V
C IN
C OUT
Input Capacitance
Output Capacitance
V IN = 3dV
V OUT = 3dV
9
10
pF
pF
NOTES:
1. V IL > -1.5V for pulse width less than 10ns.
2. V TERM must not exceed V DD +0.3V.
2942 tbl 06
NOTES:
2942 tbl 07
1. This parameter is determined by device characterization but is not production
tested.
2. 3dV references the interpolated capacitance when the input and output signals
switch from 0V to 3V or from 3V to 0V.
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (V DD = 3.3V ± 0.3V)
70V06S
70V06L
Symbol
|I LI |
|I LO |
V OL
V OH
Parameter
Input Leakage Current (1)
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Conditions
V DD = 3.6V, V IN = 0 V to V DD
V OUT = 0V to V DD
I OL = +4mA
I OH = -4mA
Min.
___
___
___
2.4
Max.
10
10
0.4
___
Min.
___
___
___
2.4
Max.
5
5
0.4
___
Unit
μA
μA
V
V
NOTE:
1. At V DD < 2.0V input leakages are undefined.
5
6.42
2942 tbl 08
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