参数资料
型号: IDT70V24L35PF8
厂商: IDT, Integrated Device Technology Inc
文件页数: 18/25页
文件大小: 0K
描述: IC SRAM 64KBIT 35NS 100TQFP
标准包装: 750
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,异步
存储容量: 64K(4K x 16)
速度: 35ns
接口: 并联
电源电压: 3 V ~ 3.6 V
工作温度: 0°C ~ 70°C
封装/外壳: 100-LQFP
供应商设备封装: 100-TQFP(14x14)
包装: 带卷 (TR)
其它名称: 70V24L35PF8
IDT70V35/34S/L (IDT70V25/24S/L)
High-Speed 3.3V 8/4K x 18 (8/4K x 16) Dual-Port Static RAM
Timing Waveform of Write with BUSY
t WP
R/ W "A"
Industrial and Commercial Temperature Ranges
t WB
(3)
BUSY "B"
R/ W "B"
(2)
t WH
(1)
5624 drw 14
,
NOTES:
1. t WH must be met for both master BUSY input (slave) and output (master).
2. BUSY is asserted on port "B" blocking R/ W "B" , until BUSY "B" goes HIGH.
3. t WB is only for the slave version.
Waveform of BUSY Arbitration Controlled by CE Timing (1) (M/ S = V IH )
ADDR "A"
and "B"
CE "A"
CE "B"
t APS (2)
t BAC
ADDRESSES MATCH
t BDC
BUSY "B"
5624 drw 15
Waveform of BUSY Arbitration Cycle Controlled by Address Match
Timing (1) (M/ S = V IH )
ADDR "A"
ADDR "B"
t APS
(2)
ADDRESS "N"
MATCHING ADDRESS "N"
t BAA
t BDA
BUSY "B"
5624 drw 16
NOTES:
1. All timing is the same for left and right ports. Port “A” may be either the left or right port. Port “B” is the port opposite from “A”.
2. If t APS is not satisfied, the BUSY signal will be asserted on one side or another but there is no guarantee on which side BUSY will be asserted.
18
6.42
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