参数资料
型号: IDT70V28L15PFG
厂商: IDT, Integrated Device Technology Inc
文件页数: 1/17页
文件大小: 0K
描述: IC SRAM 1MBIT 15NS 100TQFP
标准包装: 6
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,异步
存储容量: 1M (64K x 16)
速度: 15ns
接口: 并联
电源电压: 3 V ~ 3.6 V
工作温度: 0°C ~ 70°C
封装/外壳: 100-LQFP
供应商设备封装: 100-TQFP(14x14)
包装: 托盘
产品目录页面: 1254 (CN2011-ZH PDF)
其它名称: 70V28L15PFG
800-1393
HIGH-SPEED 3.3V
64K x 16 DUAL-PORT
STATIC RAM
IDT70V28L
True Dual-Ported memory cells which allow simultaneous
Features
access of the same memory location
M/ S = V IH for BUSY output flag on Master,
M/ S = V IL for BUSY input on Slave
High-speed access
– Commercial: 15/20ns (max.)
– Industrial: 20ns (max.)
Low-power operation
– IDT70V28L
Active: 440mW (typ.)
Standby: 660μW (typ.)
Dual chip enables allow for depth expansion without
external logic
IDT70V28 easily expands data bus width to 32 bits or
more using the Master/Slave select when cascading more
than one device
Busy and Interrupt Flags
On-chip port arbitration logic
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
Separate upper-byte and lower-byte controls for multi-
plexed bus and bus matching compatibility
LVTTL-compatible, single 3.3V (±0.3V) power supply
Available in a 100-pin TQFP
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Green parts available, see ordering information
Functional Block Diagram
R/ W L
UB L
CE 0L
CE 1L
OE L
LB L
I/O 8-15L
I/O
I/O
R/ W R
UB R
CE 0R
CE 1R
OE R
LB R
I/O 8-15R
I/O 0-7L
Control
Control
I/O 0-7R
BUSY L
(1,2)
BUSY R
(1,2)
A 15L
A 0L
Address
Decoder
64Kx16
MEMORY
ARRAY
70V28
Address
Decoder
A 15R
A 0R
16
16
SEM L
CE 0L
CE 1L
OE L
R/ W L
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
CE 0R
CE 1R
OE R
R/ W R
SEM R
INT L
(2)
M/ S
NOTES:
1. BUSY is an input as a Slave (M/ S =V IL ) and an output when it is a Master (M/ S =V IH ).
(1)
INT R
4849 drw 01
(2)
2. BUSY and INT are non-tri-state totem-pole outputs (push-pull).
?2008 Integrated Device Technology, Inc.
1
OCTOBER 2008
DSC-4849/5
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IDT70V28L15PFG8 功能描述:IC SRAM 1MBIT 15NS 100TQFP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V28L20PF 功能描述:IC SRAM 1MBIT 20NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V28L20PF8 功能描述:IC SRAM 1MBIT 20NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V28L20PFG 功能描述:IC SRAM 1MBIT 20NS 100TQFP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V28L20PFG8 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 1MBIT 20NS 100TQFP