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参数资料
| 型号： | IDT70V3389S4PRF |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 6/17页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 1.125MBIT 4NS 128TQFP |
| 标准包装： | 6 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，同步 |
| 存储容量： | 1.125M（64K x 18） |
| 速度： | 4ns |
| 接口： | 并联 |
| 电源电压： | 3.15 V ~ 3.45 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 128-LQFP |
| 供应商设备封装： | 128-TQFP（14x20） |
| 包装： | 托盘 |
| 其它名称： | 70V3389S4PRF |
IDT70V3389S
High-Speed 64K x 18 3.3V Dual-Port Synchronous Pipelined Static RAM
Truth Table II—Address Counter Control (1,2)
Industrial and Commercial Temperature Ranges
Previous
Addr
L
L
Address
X
An
An
X
Address
X
X
Ap
Ap
Used
0
An
Ap
Ap + 1
CLK
↑
↑
↑
↑
ADS
X
(4)
H
H
CNTEN
X
X
H
L (5)
CNTRST
(4)
H
H
H
I/O (3)
D I/O (0)
D I/O (n)
D I/O (p)
D I/O (p+1)
MODE
Counter Reset to Address 0
External Address Used
External Address Blocked —Counter disabled (Ap reused)
Counter Enabled —Internal Address generation
NOTES:
1. "H" = V IH, "L" = V IL, "X" = Don't Care.
2. Read and write operations are controlled by the appropriate setting of R/ W , CE 0 , CE 1 , BE n and OE .
3. Outputs are in Pipelined mode: the data out will be delayed by one cycle.
4. ADS and CNTRST are independent of all other memory control signals including CE 0 , CE 1 and BE n
5. The address counter advances if CNTEN = V IL on the rising edge of CLK, regardless of all other memory control signals including CE 0 , CE 1 , BE n.
4832 tbl 03
Recommended Operating
Temperature and Supply Voltage (1)
Recommended DC Operating
Conditions with V DDQ at 2.5V
Ambient
Symbol
Parameter
Min.
Typ.
Max.
Unit
Grade
Commercial
Industrial
Temperature
0 O C to +70 O C
-40 O C to +85 O C
GND
0V
0V
V DD
3.3V + 150mV
3.3V + 150mV
V DD
V DDQ
V SS
Core Supply Voltage
I/O Supply Voltage (3)
Ground
3.15
2.375
0
3.3
2.5
0
3.45
2.625
0
V
V
V
4832 tbl 04
NOTES:
1. Industrial temperature: for specific speeds, packages and powers contact your
sales office.
V IH
V IH
V IL
Input High Voltage (3)
(Address & Control Inputs)
Input High Voltage - I/O (3)
Input Low Voltage
1.7
1.7
-0.3 (1)
____
____
____
V DDQ + 125mV (2)
V DDQ + 125mV (2)
0.7
V
V
V
NOTES:
4832 tb l 05a
1. V IL > -1.5V for pulse width less than 10 ns.
2. V TERM must not exceed V DDQ + 125mV.
3. To select operation at 2.5V levels on the I/Os and controls of a given port, the
Absolute Maximum Ratings (1)
OPT pin for that port must be set to V IL (0V), and V DDQX for that port must be
supplied as indicated above.
Symbol
Rating
Commercial
Unit
V TERM (2)
Terminal Voltage
with Respect to
GND
& Industrial
-0.5 to +4.6
V
Recommended DC Operating
Conditions with V DDQ at 3.3V
Symbol Parameter Min. Typ. Max.
Unit
T BIAS
Temperature
Under Bias
-55 to +125
o
C
V DD
Core Supply Voltage
3.15
3.3
3.45
V
T STG
Storage
-65 to +150
o
C
V DDQ
I/O Supply Voltage
(3)
3.15
3.3
3.45
V
Temperature
V SS
Ground
0
0
0
V
I OUT
DC Output Current
50
mA
V IH
Input High Voltage
2.0
____
V DDQ + 150mV
(2)
V
4832 tbl 06
(Address & Control Inputs) (3)
-0.3
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
V IH
V IL
Input High Voltage - I/O (3)
Input Low Voltage
2.0
(1)
____
____
V DDQ + 150mV (2)
0.8
V
V
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. V TERM must not exceed V DD + 150mV for more than 25% of the cycle time or
4ns maximum, and is limited to < 20mA for the period of V TERM > V DD + 150mV.
4832 tbl 05b
NOTES:
1. V IL > -1.5V for pulse width less than 10 ns.
2. V TERM must not exceed V DDQ + 150mV.
3. To select operation at 3.3V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to V IH (3.3V), and V DDQX for that port must be
supplied as indicated above.
6.42
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