参数资料
型号: IDT70V3569S5BC
厂商: IDT, Integrated Device Technology Inc
文件页数: 5/17页
文件大小: 0K
描述: IC SRAM 576KBIT 5NS 256BGA
标准包装: 6
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,同步
存储容量: 576K(16K x 36)
速度: 5ns
接口: 并联
电源电压: 3.15 V ~ 3.45 V
工作温度: 0°C ~ 70°C
封装/外壳: 256-LBGA
供应商设备封装: 256-CABGA(17x17)
包装: 托盘
其它名称: 70V3569S5BC
IDT70V3569S
High-Speed 16K x 36 Dual-Port Synchronous Pipelined Static RAM
Pin Names
Industrial and Commercial Temperature Ranges
Left Port
CE 0L , CE 1L
R/ W L
OE L
A 0L - A 13L
I/O 0L - I/O 35L
CLK L
ADS L
CNTEN L
Right Port
CE 0R , CE 1R
R/ W R
OE R
A 0R - A 13R
I/O 0R - I/O 35R
CLK R
ADS R
CNTEN R
Names
Chip Enables
Read/Write Enable
Output Enable
Address
Data Input/Output
Clock
Address Strobe Enable
Counter Enable
CNTRST L
BE 0L - BE 3L
V DDQL
OPT L
CNTRST R
BE 0R - BE 3R
V DDQR
OPT R
V DD
Counter Reset
Byte Enables (9-bit bytes)
Power (I/O Bus) (3.3V or 2.5V) (1)
Option for selection V DDQX (1,2)
Power (3.3V) (1)
NOTES:
1. V DD , OPT X , and V DDQX must be set to appropriate operating levels prior to
applying inputs on the I/Os and controls for that port.
2. OPT X selects the operating voltage levels for the I/Os and controls on that port.
If OPT X is set to VIH (3.3V), then that port's I/Os and controls will operate at 3.3V
levels and V DDQX must be supplied at 3.3V. If OPT X is set to VIL (0V), then that
port's I/Os and controls will operate at 2.5V levels and V DDQX must be supplied
at 2.5V. The OPT pins are independent of one another—both ports can operate
V SS
Ground
(0V)
at 3.3V levels, both can operate at 2.5V levels, or either can operate at 3.3V
with the other at 2.5V.
4831 tbl 01
Truth Table I—Read/Write and Enable Control (1,2,3,4)
Byte 3
Byte 2
Byte 1
Byte 0
OE
X
X
X
X
X
X
X
X
X
X
L
L
L
L
L
L
L
H
CLK
CE 0
H
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
CE 1
X
L
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
BE 3
X
X
H
H
H
H
L
H
L
L
H
H
H
L
H
L
L
L
BE 2
X
X
H
H
H
L
H
H
L
L
H
H
L
H
H
L
L
L
BE 1
X
X
H
H
L
H
H
L
H
L
H
L
H
H
L
H
L
L
BE 0
X
X
H
L
H
H
H
L
H
L
L
H
H
H
L
H
L
L
R/ W
X
X
X
L
L
L
L
L
L
L
H
H
H
H
H
H
H
X
I/O 27-35
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
D IN
High-Z
D IN
D IN
High-Z
High-Z
High-Z
D OUT
High-Z
D OUT
D OUT
High-Z
I/O 18-26
High-Z
High-Z
High-Z
High-Z
High-Z
D IN
High-Z
High-Z
D IN
D IN
High-Z
High-Z
D OUT
High-Z
High-Z
D OUT
D OUT
High-Z
I/O 9-17
High-Z
High-Z
High-Z
High-Z
D IN
High-Z
High-Z
D IN
High-Z
D IN
High-Z
D OUT
High-Z
High-Z
D OUT
High-Z
D OUT
High-Z
I/O 0-8
High-Z
High-Z
High-Z
D IN
High-Z
High-Z
High-Z
D IN
High-Z
D IN
D OUT
High-Z
High-Z
High-Z
D OUT
High-Z
D OUT
High-Z
MODE
Deselected –Power Down
Deselected –Power Down
All Bytes Deselected
Write to Byte 0 Only
Write to Byte 1 Only
Write to Byte 2 Only
Write to Byte 3 Only
Write to Lower 2 Bytes Only
Write to Upper 2 bytes Only
Write to All Bytes
Read Byte 0 Only
Read Byte 1 Only
Read Byte 2 Only
Read Byte 3 Only
Read Lower 2 Bytes Only
Read Upper 2 Bytes Only
Read All Bytes
Outputs Disabled
NOTES:
1. "H" = V IH, "L" = V IL, "X" = Don't Care.
2. ADS , CNTEN , CNTRST = X.
3. OE is an asynchronous input signal.
4. It is possible to read or write any combination of bytes during a given access. A few representative samples have been illustrated here.
5
6.42
4831 tbl 02
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