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参数资料
| 型号： | IDT70V3599S133BF |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 21/23页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 4MBIT 133MHZ 208FBGA |
| 标准包装： | 7 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，同步 |
| 存储容量： | 4.5M（128K x 36） |
| 速度： | 133MHz |
| 接口： | 并联 |
| 电源电压： | 3.15 V ~ 3.45 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 208-LFBGA |
| 供应商设备封装： | 208-CABGA（15x15） |
| 包装： | 托盘 |
| 其它名称： | 70V3599S133BF 800-2313 IDT70V3599S133BF-ND |
IDT70V3599/89S
High-Speed 3.3V 128/64K x 36 Dual-Port Synchronous Static RAM
Identification Register Definitions
Industrial and Commercial Temperature Ranges
0x0312
Instruction Field
Revision Number (31:28)
IDT Device ID (27:12)
IDT JEDEC ID (11:1)
ID Register Indicator Bit (Bit 0)
NOTE:
1. Device ID for IDT70V3589 is 0x0313.
Scan Register Sizes
Register Name
Instruction (IR)
Bypass (BYR)
Identification (IDR)
Boundary Scan (BSR)
Value
0x0
(1)
0x33
1
Bit Size
4
1
32
Note (3)
Description
Reserved for version number
Defines IDT part number
Allows unique identification of device vendor as IDT
Indicates the presenc e of an ID register
5617 tbl 13
5617 tbl 14
System Interface Parameters
Instruction
EXTEST
BYPASS
IDCODE
HIGHZ
SAMPLE/PRELOAD
RESERVED
NOTES:
Code
0000
1111
0010
0011
0001
All other codes
Description
Forces contents of the bound ary scan cells onto the device outputs (1) .
Places the boundary scan register (BSR) between TDI and TDO.
Places the bypass registe r (BYR) between TDI and TDO.
Loads the ID register (IDR) with the vendor ID code and places the
register between TDI and TDO.
Places the bypass register (BYR) between TDI and TDO. Forces all
device output drivers to a High-Z state.
Places the boundary scan register (BSR) between TDI and TDO.
SAMPLE allows data from device inputs (2) to be captured in the
boundary scan cells and shifted serially through TDO. PRELOAD allows
data to be input serially into the boundary scan cells via the TDI.
Several combinations are reserved. Do not use codes other than those
identified above.
5617 tbl 15
1. Device outputs = All device outputs except TDO.
2. Device inputs = All device inputs except TDI, TMS, and TRST .
3. The Boundary Scan Descriptive Language (BSDL) file for this device is available on the IDT website (www.idt.com), or by contacting your local
IDT sales representative.
21
6.42
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| IDT70V3599S133BF8 | 功能描述:IC SRAM 4MBIT 133MHZ 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70V3599S133BFGI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 4.5MBIT 133MHZ 208FPBGA |
| IDT70V3599S133BFGI8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 4.5MBIT 133MHZ 208FPBGA |
| IDT70V3599S133BFI | 功能描述:IC SRAM 4MBIT 133MHZ 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70V3599S133BFI8 | 功能描述:IC SRAM 4MBIT 133MHZ 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
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