参数资料
型号: IDT70V3599S133BFI
厂商: IDT, Integrated Device Technology Inc
文件页数: 9/23页
文件大小: 0K
描述: IC SRAM 4MBIT 133MHZ 208FBGA
标准包装: 7
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,同步
存储容量: 4.5M(128K x 36)
速度: 133MHz
接口: 并联
电源电压: 3.15 V ~ 3.45 V
工作温度: -40°C ~ 85°C
封装/外壳: 208-LFBGA
供应商设备封装: 208-CABGA(15x15)
包装: 托盘
其它名称: 70V3599S133BFI
IDT70V3599/89S
High-Speed 3.3V 128/64K x 36 Dual-Port Synchronous Static RAM
Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (3) (V DD = 3.3V ± 150mV)
70V3599/89S166
Com'l Only
70V3599/89S133
Com'l
& Ind
Symbol
Parameter
Test Condition
Version
Typ. (4)
Max.
Typ. (4)
Max.
Unit
I DD
Dynamic Operating
CE L and CE R = V IL ,
COM'L
S
370
500
320
400
mA
Current (Both
Outputs Disabled,
Ports Active)
f = f MAX (1)
IND
S
____
____
320
480
I SB1
Standby Current
CE L = CE R = V IH,
COM'L
S
125
200
115
160
mA
(Both Ports - TTL
Outputs Disabled,
Level Inputs)
f = f MAX (1)
IND
S
____
____
115
195
CE "A" = V IL and CE "B" = V IH
I SB2
Standby Current
(5)
COM'L
S
250
350
220
290
mA
(One Port - TTL
Active Port Outputs Disabled,
Level Inputs)
f=f MAX (1)
IND
S
____
____
220
350
I SB3
I SB4
Full Standby Current
(Both Ports - CMOS
Level Inputs)
Full Standby Current
(One Port - CMOS
Level Inputs)
Both Ports Outputs Disabled
CE L and CE R > V DDQ - 0.2V,
V IN > V DDQ - 0.2V or V IN < 0.2V,
f = 0 (2)
CE "A" < 0.2V and CE "B" > V DDQ - 0.2V (5)
V IN > V DDQ - 0.2V or V IN < 0.2V,
Active Port, Outputs Disabled,
f = f MAX (1)
COM'L
IND
COM'L
IND
S
S
S
S
15
____
250
____
30
____
350
____
15
15
220
220
30
40
290
350
mA
mA
NOTES:
5617 tbl 09
1. At f = f MAX , address and control lines (except Output Enable) are cycling at the maximum frequency clock cycle of 1/t CYC , using "AC TEST CONDITIONS" at input
levels of GND to 3V.
2. f = 0 means no address, clock, or control lines change. Applies only to input at CMOS level standby.
3. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
4. V DD = 3.3V, T A = 25°C for Typ, and are not production tested. I DD DC (f=0) = 120mA (Typ).
5. CE X = V IL means CE 0X = V IL and CE 1X = V IH
CE X = V IH means CE 0X = V IH or CE 1X = V IL
CE X < 0.2V means CE 0X < 0.2V and CE 1X > V DDQ - 0.2V
CE X > V DDQ - 0.2V means CE 0X > V DDQ - 0.2V or CE 1X - 0.2V
"X" represents "L" for left port or "R" for right port.
9
6.42
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