参数资料
型号: IDT70V631S10BC8
厂商: IDT, Integrated Device Technology Inc
文件页数: 23/23页
文件大小: 0K
描述: IC SRAM 4MBIT 10NS 256BGA
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,异步
存储容量: 4.5M(256K x 18)
速度: 10ns
接口: 并联
电源电压: 3.15 V ~ 3.45 V
工作温度: 0°C ~ 70°C
封装/外壳: 256-LBGA
供应商设备封装: 256-CABGA(17x17)
包装: 带卷 (TR)
其它名称: 70V631S10BC8
IDT70V631S
High-Speed 3.3V 256K x 18 Asynchronous Dual-Port Static RAM
Ordering Information
Industrial and Commercial Temperature Ranges
XXXXX
Device
A
Power
999
Speed
A
Package
A
A
Process/
A
Type
Temperature
Range
Blank
8
Blank
I (1)
G (2)
BF
PRF
BC
Tube or Tray
Tape and Reel
Commercial (0 ° C to +70 ° C)
Industrial (-40 ° C to +85 ° C)
Green
208-ball fpBGA (BF-208)
128-pin TQFP (PK-128)
256-ball BGA (BC-256)
10
12
15
S
Commercial Only
Commercial & Industrial
Commercial Only
Standard Power
Speed in nanoseconds
70V631 4608K (256K x 18) 3.3V Asynchronous Dual-Port RAM
5622 drw 21
NOTES:
1. Contact your local sales office for industrial temp range for other speeds, packages and powers.
2. Green parts available for specific speeds, packages and powers contact your local sales office.
Datasheet Document History:
06/01/00:
08/07/00:
06/20/01:
08/08/01:
10/01/03:
Initial Public Offering
Page 6, 13 & 20 Inserted additional LB and UB information
Page 1 Added JTAG information for TQFP package
Page 14 Increased BUSY TIMING parameters t BDA , t BAC , t BDC and t BDD for all speeds
Page 21 Changed maximum value for JTAG AC Electrical Characteristics for t JCD from 20ns to 25ns
Page 3 Corrected pin 4 designation error from A17R to A17L on PK-128 pinout
Removed Preliminary status
Page 2, 3 & 4 Added date revision for pin configurations
Page 8, 10, 14 & 16 Removed I-temp 15ns speed from DC & AC Electrical Characteristics Tables
Page 23 Removed I-temp 15ns speed from ordering information
Added I-temp footnote to ordering information
Page 1 & 23 Replaced TM logo with ? logo
07/25/08:
Page 8
Corrected a typo in the DC Chars table
01/29/09:
Page 23 Removed "IDT" from orderable part number
10/23/13:
Page 1
Added green availability to Features
Page 23 Added green and T&R indicators to ordering information
CORPORATE HEADQUARTERS
6024 Silver Creek Valley Road
San Jose, CA 95138
for SALES:
800-345-7015 or 408-284-8200
fax: 408-284-2775
for Tech Support:
408-284-2794
DualPortHelp@idt.com
www.idt.com
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
23
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IDT70V631S10BCG8 功能描述:IC SRAM 4MBIT 10NS 256BGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
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