参数资料
型号: IDT70V9079L6PFG8
厂商: IDT, Integrated Device Technology Inc
文件页数: 11/19页
文件大小: 0K
描述: IC SRAM 256KBIT 6NS 100TQFP
标准包装: 750
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,同步
存储容量: 256K (32K x 8)
速度: 6ns
接口: 并联
电源电压: 3 V ~ 3.6 V
工作温度: 0°C ~ 70°C
封装/外壳: 100-LQFP
供应商设备封装: 100-TQFP(14x14)
包装: 带卷 (TR)
其它名称: 70V9079L6PFG8
IDT70V9089/79S/L
High Speed 3.3V 64/32K x 8 Synchronous Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Timing Waveform of a Bank Select Pipelined Read (1,2)
t CYC2
CLK
t CH2
t CL2
t SA
t HA
ADDRESS (B1)
A 0
A 1
A 2
A 3
A 4
A 5
A 6
t SC
t HC
CE 0(B1)
t SC
t HC
t CD2
t CD2
t CKHZ
(3)
t CD2
DATA OUT(B1)
Q 0
t DC
Q 1
t DC
t CKLZ
(3)
Q 3
t CKHZ (3)
t SA
t HA
ADDRESS (B2)
A 0
A 1
A 2
A 3
A 4
A 5
A 6
t SC
t HC
CE 0(B2)
t SC
t HC
t CD2
t CKHZ (3)
t CD2
DATA OUT(B2)
t CKLZ (3)
Q 2
t CKLZ (3)
Q 4
3750 drw 08
Timing Waveform of a Bank Select Flow-Through Read (6)
t CYC1
CLK
t CH1
t CL1
t SA
t HA
ADDRESS (B1)
A 0
A 1
A 2
A 3
A 4
A 5
A 6
CE 0(B1)
t SC
t HC
t SC
t HC
t CD1
t CD1
t CKHZ
(1)
t CD1
t CD1
DATA OUT(B1)
D 0
t DC
D 1
t DC
t CKLZ
(1)
D 3
t CKHZ (1)
t CKLZ
(1)
D 5
t SA
t HA
ADDRESS (B2)
A 0
A 1
A 2
A 3
A 4
A 5
A 6
t SC
t HC
CE 0(B2)
t SC
t HC
t CD1
t CKHZ
(1)
t CD1
t CKHZ
(1)
DATA OUT(B2)
t CKLZ
(1)
D 2
t CKLZ
(1)
D 4
NOTES:
1. B1 Represents Bank #1; B2 Represents Bank #2. Each Bank consists of one IDT70V9089/79 for this waveform,
and are setup for depth expansion in this example. ADDRESS (B1) = ADDRESS (B2) in this situation.
2. OE and ADS = V IL ; CE 1(B1) , CE 1(B2) , R/ W and CNTRST = V IH .
3. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).
4. CE 0 and ADS = V IL ; CE 1 and CNTRST = V IH .
5. OE = V IL for the Right Port, which is being read from. OE = V IH for the Left Port, which is being written to.
6. If t CCS < maximum specified, then data from right port READ is not valid until the maximum specified for t CWDD .
If t CCS > maximum specified, then data from right port READ is not valid until t CCS + t CD1 . t CWDD does not apply in this case.
11
6.42
3750 drw 08a
相关PDF资料
PDF描述
IDT70V9079L6PF8 IC SRAM 256KBIT 6NS 100TQFP
IDT70V25S15PF IC SRAM 128KBIT 15NS 100TQFP
IDT70V06S15PF IC SRAM 128KBIT 15NS 64TQFP
IDT7035S15PF IC SRAM 144KBIT 15NS 100TQFP
IDT7025S17PF IC SRAM 128KBIT 17NS 100TQFP
相关代理商/技术参数
参数描述
IDT70V9079L7PF 功能描述:IC SRAM 256KBIT 7NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V9079L7PF8 功能描述:IC SRAM 256KBIT 7NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,异步 存储容量:128K(8K x 16) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:70V25S15PF
IDT70V9079L7PFG 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 256KBIT 7.5NS 100TQFP
IDT70V9079L7PFG8 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 256KBIT 7.5NS 100TQFP
IDT70V9079L9PF 功能描述:IC SRAM 256KBIT 9NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8