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| 型号： | IDT70V9159L7BF |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 5/16页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 72KBIT 7NS 100FBGA |
| 标准包装： | 60 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，同步 |
| 存储容量： | 72K（8K x 9） |
| 速度： | 7ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 100-LFBGA |
| 供应商设备封装： | 100-CABGA（10x10） |
| 包装： | 托盘 |
| 其它名称： | 70V9159L7BF |
IDT70V9169/59L
High-Speed 3.3V 16/8K x 9 Dual-Port Synchronous Pipelined Static RAM
Truth Table II—Address Counter Control (1,2)
Industrial and Commercial Temperature Ranges
Previous
Internal
L
L
External
Address
An
X
X
X
Internal
Address
X
An
An + 1
X
Address
Used
An
An + 1
An + 1
A 0
CLK
↑
↑
↑
↑
ADS
L (4)
H
H
X
CNTEN
X
(5)
H
X
CNTRST
H
H
H
(4)
I/O (3)
D I/O (n)
D I/O (n+1)
D I/O (n+1)
D I/O (0)
MODE
External Address Used
Counter Enabled—Internal Address generation
External Address Blocked—Counter disabled (An + 1 reused)
Counter Reset to Address 0
NOTES:
1. "H" = V IH, "L" = V IL, "X" = Don't Care.
2. CE 0 , LB , UB , and OE = V IL ; CE 1 and R/ W = V IH .
3. Outputs configured in Flow-Through Output mode: if outputs are in Pipelined mode the data out will be delayed by one cycle.
4. ADS and CNTRST are independent of all other signals including CE 0 , CE 1 , UB and LB .
5. The address counter advances if CNTEN = V IL on the rising edge of CLK, regardless of all other signals including CE 0 , CE 1 , UB and LB .
5655 tbl 03
Recommended Operating
Temperature and Supply Voltage
Recommended DC Operating
Conditions
-40 C to +85 C
Grade
Commercial
Industrial
NOTES:
Ambient
Temperature (1)
0 O C to +70 O C
O O
GND
0V
0V
V DD
3.3V + 0.3V
3.3V + 0.3V
5655 tbl 04
Symbol
V DD
V SS
V IH
V IL
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
3.0
0
2.0
-0.3 (1)
Typ.
3.3
0
____
____
Max.
3.6
0
V DD +0.3V (2)
0.8
Unit
V
V
V
V
1. This is the parameter T A . This is the "instant on" case temperature.
NOTES:
1. V IL > -1.5V for pulse width less than 10 ns.
2. V TERM must not exceed V DD +0.3V.
5655 tbl 05
Absolute Maximum Ratings (1)
Symbol Rating Commercial
& Industrial
Unit
Capacitance (1)
(T A = +25°C, f = 1.0MH Z )
Symbol Parameter
Conditions (2)
Max.
Unit
V TERM
C OUT
T BIAS
(2)
Terminal Voltage
with Respect to
GND
Temperature
Under Bias
-0.5 to +4.6
-55 to +125
V
o
C
C IN
(3)
NOTES:
Input Capacitance
Output Capacitance
V IN = 3dV
V OUT = 3dV
9
10
pF
pF
5655 tbl 07
T STG
Storage
Temperature
-65 to +150
o
C
1. These parameters are determined by device characterization, but are not
production tested.
2. 3dV references the interpolated capacitance when the input and output switch
I OUT
NOTES:
DC Output Current
50
mA
5655 tbl 06
from 0V to 3V or from 3V to 0V.
3. C OUT also references C I/O .
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. V TERM must not exceed V DD +0.3V for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of V TERM > V DD + 0.3V.
5
6.42
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