参数资料
型号: IDT70V9289L12PRF
厂商: IDT, Integrated Device Technology Inc
文件页数: 16/19页
文件大小: 0K
描述: IC SRAM 1MBIT 12NS 128TQFP
标准包装: 6
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,同步
存储容量: 1M (64K x 16)
速度: 12ns
接口: 并联
电源电压: 3 V ~ 3.6 V
工作温度: 0°C ~ 70°C
封装/外壳: 128-LQFP
供应商设备封装: 128-TQFP(14x20)
包装: 托盘
其它名称: 70V9289L12PRF
IDT70V9389/289L
High-Speed 3.3V 64K x18/x16 Dual-Port Synchronous Pipelined Static RAM
Industrial & Commercial Temperature Ranges
Timing Waveform of Write with Address Counter Advance
(Flow-Through or Pipelined Outputs) (1)
t CYC2
CLK
t CH2
t CL2
t SA
t HA
ADDRESS
An
INTERNAL (3)
ADDRESS
An (7)
An + 1
An + 2
An + 3
An + 4
t SAD t HAD
ADS
CNTEN (7)
t SD t HD
DATA IN
Dn
Dn + 1
Dn + 1
Dn + 2
Dn + 3
Dn + 4
WRITE
EXTERNAL
ADDRESS
WRITE WRITE
WITH COUNTER COUNTER HOLD
WRITE WITH COUNTER
4856 drw 16
Timing Waveform of Counter Reset (Pipelined Outputs) (2)
t CYC2
t CH2
t CL2
CLK
t SA t HA
ADDRESS (4)
An
An + 1
A n + 2
INTERNAL (3)
ADDRESS
Ax
(6)
0
1
An
An + 1
t SW t HW
R/ W
ADS
t SAD t HAD
CNTEN
t SCN t HCN
t SRST t HRST
CNTRST
DATA IN
t SD
t HD
D 0
DATA OUT (5)
Q 0
Q 1
Qn
COUNTER
RESET
(6)
WRITE
ADDRESS 0
READ
ADDRESS 0
READ
ADDRESS 1
READ
ADDRESS n
READ
ADDRESS n+1
NOTES:
1. CE 0 , UB , LB , and R/ W = V IL ; CE 1 and CNTRST = V IH .
4856 drw 17
2. CE 0 , UB , LB = V IL ; CE 1 = V IH .
3. The "Internal Address" is equal to the "External Address" when ADS = V IL and equals the counter output when ADS = V IH .
4. Addresses do not have to be accessed sequentially since ADS = V IL constantly loads the address on the rising edge of the CLK; numbers are for reference use only.
5. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals.
6. No dead cycle exists during counter reset. A READ or WRITE cycle may be coincidental with the counter reset cycle. ADDR 0 will be accessed. Extra cycles
are shown here simply for clarification.
7. CNTEN = V IL advances Internal Address from ‘An’ to ‘An +1’. The transition shown indicates the time required for the counter to advance.
The ‘An +1’ Address is written to during this cycle.
16
6.42
相关PDF资料
PDF描述
KMPC8540PX667LB IC MPU PWRQUICC 783-FCPBGA
IDT7054L25PRF IC SRAM 32KBIT 25NS 128TQFP
KMPC8540CVT667JB IC MPU PWRQUICC 783-FCPBGA
IDT7006L35G IC SRAM 128KBIT 35NS 68PGA
XC4052XL-1HQ240C IC FPGA C-TEMP 3.3V 1SPD 240HQFP
相关代理商/技术参数
参数描述
IDT70V9289L12PRF8 功能描述:IC SRAM 1MBIT 12NS 128TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V9289L6PRF 功能描述:IC SRAM 1MBIT 6NS 128TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70V9289L6PRF8 功能描述:IC SRAM 1MBIT 6NS 128TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V9289L7PRF 功能描述:IC SRAM 1MBIT 7NS 128TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70V9289L7PRF8 功能描述:IC SRAM 1MBIT 7NS 128TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8