参数资料
型号: IDT70V9349L7BF
厂商: IDT, Integrated Device Technology Inc
文件页数: 14/17页
文件大小: 0K
描述: IC SRAM 72KBIT 7NS 100FBGA
标准包装: 60
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,同步
存储容量: 72K(4K x 18)
速度: 7ns
接口: 并联
电源电压: 3 V ~ 3.6 V
工作温度: 0°C ~ 70°C
封装/外壳: 100-LFBGA
供应商设备封装: 100-CABGA(10x10)
包装: 托盘
其它名称: 70V9349L7BF
IDT70V9359/49L
High-Speed 3.3V 8/4K x 18 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
Timing Waveform of Write with Address Counter Advance
(Flow-Through or Pipelined Outputs) (1)
t CYC2
CLK
t CH2
t CL2
t SA
t HA
ADDRESS
An
INTERNAL (3)
ADDRESS
An (7)
An + 1
An + 2
An + 3
An + 4
t SAD t HAD
ADS
CNTEN (7)
t SD t HD
DATA IN
Dn
Dn + 1
Dn + 1
Dn + 2
Dn + 3
Dn + 4
WRITE
EXTERNAL
ADDRESS
WRITE WRITE
WITH COUNTER COUNTER HOLD
WRITE WITH COUNTER
5638 drw 17
Timing Waveform of Counter Reset (Pipelined Outputs) (2)
t CYC2
t CH2
t CL2
CLK
t SA t HA
ADDRESS (4)
An
An + 1
An + 2
INTERNAL (3)
ADDRESS
Ax (6)
0
1
An
An + 1
t SW t HW
R/ W
ADS
t SAD t HAD
CNTEN
t SCN t HCN
t SRST t HRST
CNTRST
DATA IN
t SD
t HD
D 0
DATA OUT (5)
Q 0
Q 1
Qn
COUNTER
RESET
(6)
WRITE
ADDRESS 0
READ
ADDRESS 0
READ
ADDRESS 1
READ
ADDRESS n
READ
ADDRESS n+1
NOTES:
1. CE 0 , UB , LB , and R/ W = V IL ; CE 1 and CNTRST = V IH .
5638 drw 18
2. CE 0 , UB , LB = V IL ; CE 1 = V IH .
3. The "Internal Address" is equal to the "External Address" when ADS = V IL and equals the counter output when ADS = V IH .
4. Addresses do not have to be accessed sequentially since ADS = V IL constantly loads the address on the rising edge of the CLK; numbers are for reference use only.
5. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals.
6. No dead cycle exists during counter reset. A READ or WRITE cycle may be coincidental with the counter reset cycle. ADDR 0 will be accessed. Extra cycles
are shown here simply for clarification.
7. CNTEN = V IL advances Internal Address from ‘An’ to ‘An +1’. The transition shown indicates the time required for the counter to advance.
The ‘An +1’ Address is written to during this cycle.
14
6.42
相关PDF资料
PDF描述
IDT70V9159L7BF IC SRAM 72KBIT 7NS 100FBGA
IDT709349L7BF IC SRAM 72KBIT 7NS 100FBGA
IDT7005L20JI8 IC SRAM 64KBIT 20NS 68PLCC
MPC8247VRTMFA IC MPU POWERQUICC II 516-PBGA
15-38-8060 CONN FFC FEMALE 6POS .100 TIN
相关代理商/技术参数
参数描述
IDT70V9349L7BFI 功能描述:IC SRAM 72KBIT 7NS 100FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,异步 存储容量:128K(8K x 16) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:70V25S15PF
IDT70V9349L7PF 功能描述:IC SRAM 72KBIT 7NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,异步 存储容量:128K(8K x 16) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:70V25S15PF
IDT70V9349L7PF8 功能描述:IC SRAM 72KBIT 7NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M(256K x 36) 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:71V67703S75PFGI
IDT70V9349L7PFI 功能描述:IC SRAM 72KBIT 7NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,异步 存储容量:128K(8K x 16) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:70V25S15PF
IDT70V9349L7PFI8 功能描述:IC SRAM 72KBIT 7NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M(256K x 36) 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:71V67703S75PFGI