- 您现在的位置：买卖IC网 > PDF目录22176 > IDT71016S12PH8 (IDT, Integrated Device Technology Inc)IC SRAM 1MBIT 12NS 44TSOP PDF资料下载
参数资料
| 型号： | IDT71016S12PH8 |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 6/9页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 1MBIT 12NS 44TSOP |
| 产品变化通告： | Product Discontinuation 29/Apr/2010 |
| 标准包装： | 1,500 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 异步 |
| 存储容量： | 1M (64K x 16) |
| 速度： | 12ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 44-TSOP（0.400"，10.16mm 宽） |
| 供应商设备封装： | 44-TSOP II |
| 包装： | 带卷 (TR) |
| 其它名称： | 71016S12PH8 |
IDT71016, CMOS Static RAM
1 Meg (64K x 16-bit)
Timing Waveform of Read Cycle No. 2 (1)
t RC
ADDRESS
t AA
OE
Commercial and Industrial Temperature Ranges
t OH
CS
t OLZ
(3)
t OE
t OHZ
(3)
,
t CLZ
(3)
t ACS (2)
t CHZ
(3)
BHE , BLE
t BE
(3)
t BLZ
(2)
t BHZ
(3)
DATA OUT
NOTES:
DATA OUT VALID
3210 drw 07
1. WE is HIGH for Read Cycle.
2. Address must be valid prior to or coincident with the later of CS , BHE , or BLE transition LOW; otherwise t AA is the limiting parameter.
3. Transition is measured ±200mV from steady state.
Timing Waveform of Write Cycle No. 1 ( WE Controlled Timing) (1,2,4)
t WC
ADDRESS
t AW
CS
t CW
(2)
t CHZ
(5)
t BW
BHE , BLE
WE
t WP
t WR
t BHZ
(5)
DATA OUT
t AS
PREVIOUS DATA VALID
(3)
t WHZ
(5)
t DW
t OW
t DH
(5)
DATA VALID
,
DATA IN
DATA IN VALID
3210 drw 08
NOTES:
1. A write occurs during the overlap of a LOW CS , LOW BHE or BLE , and a LOW WE .
2. OE is continuously HIGH. If during a WE controlled write cycle OE is LOW, t WP must be greater than or equal to t WHZ + t DW to allow the I/O drivers to turn off and
data to be placed on the bus for the required t DW . If OE is HIGH during a WE controlled write cycle, this requirement does not apply and the
minimum write pulse is as short as the specified t WP .
3. During this period, I/O pins are in the output state, and input signals must not be applied.
4. If the CS LOW or BHE and BLE LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in a high-impedance state.
5. Transition is measured ±200mV from steady state.
6.42
相关PDF资料 |
PDF描述 |
|---|---|
| SBL850 | DIODE SCHOTTKY 8A 50V TO220-2 |
| IDT71016S12PH | IC SRAM 1MBIT 12NS 44TSOP |
| T95R227K6R3HZSL | CAP TANT 220UF 6.3V 10% 2824 |
| ACC30DREI-S13 | CONN EDGECARD 60POS .100 EYELET |
| IDT70V7339S166DDI | IC SRAM 9MBIT 166MHZ 144TQFP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT71016S12PHG | 功能描述:IC SRAM 1MBIT 12NS 44TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:4G（256M x 16） 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP I 包装:Digi-Reel® 其它名称:557-1461-6 |
| IDT71016S12PHG8 | 功能描述:IC SRAM 1MBIT 12NS 44TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:4G（256M x 16） 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP I 包装:Digi-Reel® 其它名称:557-1461-6 |
| IDT71016S12PHGI | 功能描述:IC SRAM 1MBIT 12NS 44TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步，DDR II 存储容量:18M（1M x 18） 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA（13x15） 包装:托盘 其它名称:71P71804S200BQ |
| IDT71016S12PHGI8 | 功能描述:IC SRAM 1MBIT 12NS 44TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步，DDR II 存储容量:18M（1M x 18） 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA（13x15） 包装:托盘 其它名称:71P71804S200BQ |
| IDT71016S12PHI | 功能描述:IC SRAM 1MBIT 12NS 44TSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步，DDR II 存储容量:18M（1M x 18） 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA（13x15） 包装:托盘 其它名称:71P71804S200BQ |
发布紧急采购，3分钟左右您将得到回复。