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参数资料
| 型号： | IDT7130LA55TF |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 6/21页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 8KBIT 55NS 64STQFP |
| 标准包装： | 40 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 8K (1K x 8) |
| 速度： | 55ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 64-LQFP |
| 供应商设备封装： | 64-TQFP（10x10） |
| 包装： | 托盘 |
| 其它名称： | 7130LA55TF |
IDT7130SA/LA and IDT7140SA/LA
High-Speed 1K x 8 Dual-Port Static SRAM
Military, Industrial and Commercial Temperature Ranges
Absolute Maximum Ratings (1)
Symbol Rating Commercial Military
& Industrial
Unit
Recommended DC Operating
Conditions
Symbol Parameter Min. Typ.
Max.
Unit
V TERM (2)
Terminal Voltage
with Respect
to GND
-0.5 to +7.0
-0.5 to +7.0
V
V CC
GND
Supply Voltage
Ground
4.5
0
5.0
0
5.5
0
V
V
6.0
T BIAS
Temperature
Under Bias
-55 to +125
-65 to +135
o
C
V IH
Input High Voltage
2.2
____
(2)
V
C
Input Low Voltage
-0.5
V IL
T STG
I OUT
Storage
Temperature
DC Output
Current
-65 to +150
50
-65 to +150
50
o
mA
NOTES:
1. V IL (min.) > -1.5V for pulse width less than 10ns.
2. V TERM must not exceed Vcc + 10%.
(1)
____
0.8
V
2689 tbl 02
2689 tbl 01
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in
the operational sections of the specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. V TERM must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns
Recommended Operating
Temperature and Supply Voltage (1)
Grade Ambient GND Vcc
Temperature
maximum, and is limited to < 20mA for the period of V TERM > Vcc + 10%.
Military
Commercial
-55 O C to +125 O C
0 O C to +70 O C
0V
0V
5.0V + 10%
5.0V + 10%
Capacitance (T A = +25°C, f = 1.0MHz)
STQFP and TQFP Packages Only
Symbol Parameter (1) Conditions Max.
Unit
Industrial -40 O C to +85 O C 0V 5.0V + 10%
2689 tbl 03
NOTES:
1. This is the parameter T A . This is the "instant on" case temperature.
C IN
C OUT
Input Capacitance
Output Capacitance
V IN = 3dV
V OUT = 3dV
9
10
pF
pF
NOTES:
2689 tbl 05
1. This parameter is determined by device characterization but is not production
tested.
2. 3dV references the interpolated capacitance when the input and output signals
switch from 0V to 3V or from 3V to 0V.
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (V CC = 5.0V ± 10%)
7130SA
7140SA
7130LA
7140LA
Symbol
|I LI |
|I LO |
V OL
V OL
V OH
Parameter
Input Leakage Current (1)
Output Leakage Current (1)
Output Low Voltage (I/O 0 -I/O 7 )
Open Drain Output
Low Voltage ( BUSY , INT )
Output High Voltage
Test Conditions
V CC = 5.5V, V IN = 0V to V CC
V CC - 5.5V,
CE = V IH , V OUT = 0V to V CC
I OL = 4mA
I OL = 16mA
I OH = -4mA
Min.
___
___
___
___
2.4
Max.
10
10
0.4
0.5
___
Min.
___
___
___
___
2.4
Max.
5
5
0.4
0.5
___
Unit
μA
μA
V
V
V
NOTE:
1. At Vcc < 2.0V leakages are undefined.
6
2689 tbl 04
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