参数资料
型号: IDT7132LA20J8
厂商: IDT, Integrated Device Technology Inc
文件页数: 15/16页
文件大小: 0K
描述: IC SRAM 16KBIT 20NS 52PLCC
标准包装: 400
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,异步
存储容量: 16K (2K x 8)
速度: 20ns
接口: 并联
电源电压: 4.5 V ~ 5.5 V
工作温度: 0°C ~ 70°C
封装/外壳: 52-LCC(J 形引线)
供应商设备封装: 52-PLCC(19x19)
包装: 带卷 (TR)
其它名称: 7132LA20J8
IDT7132SA/LA and IDT 7142SA/LA
High Speed 2K x 8 Dual Port Static RAM
Ordering Information
Military, Industrial and Commercial Temperature Ranges
XXXX
A
999 A
A
A
Device TypePower Speed Package
Process/
Temperature
Range
BLANK Commercial (0 ° C to +70 ° C)
I (1) Industrial (-40 ° C to +85 ° C)
B Military (-55 ° C to +125 ° C)
Compliant to MIL-PRF-38535 QML
G (2)
Green
P
C
J
L48
F
48-pin Plastic DIP (P48-1)
48-pin Sidebraze DIP (C48-2)
52-pin PLCC (J52-1)
48-pin LCC (L48-1)
48-pin Ceramic Flatpack (F48-1)
,
?
? Speed in nanoseconds
?
20
25
35
55
100
LA
SA
7132
7142
Commercial PLCC Only
Commercial, Industrial & Military
Commercial & Military
Commercial & Military
Commercial & Military
Low Power
Standard Power
16K (2K x 8-Bit) MASTER Dual-Port RAM
16K (2K x 8-Bit) SLAVE Dual-Port RAM
2692 drw 16
NOTES:
1. Industrial temperature range is available.For specific speeds, packages and powers contact your sales office.
2. Green parts available. For specific speeds, packages and powers contact your local sales office.
Datasheet Document History
03/24/99:
06/08/99:
Pages 2 and 3
Initiated datasheet document history
Converted to new format
Cosmetic and typographical corrections
Added additional notes to pin configurations
Changed drawing format
08/26/99:
11/10/99:
01/12/00:
Page 14
Pages 1 and 2
Page 1
Page 2
Page 3
Page 4
Page 6
Page 14
Changed Busy Logic and Width Expansion copy
Replaced IDT logo
Moved full "Description" to page 2 and adjusted page layouts
Added "(LAonly)" to paragraph
Fixed P48-1 body package description
Increased storage temperature parameters
Clarified T A parameter
DC Electrical parameters–changed wording from "open" to "disabled"
Added asteriks to Figures 1 and 3 in drw 06
Corrected part numbers
Changed ±500mV to 0mV in notes
Datasheet Document History continued on page 16
15
6.42
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