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参数资料
| 型号： | IDT7133LA45PF |
| 厂商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分类： | DRAM |
| 英文描述： | SILICONE COATED MIL GRADE WIREWOUND RESISTOR AXIAL LEAD , 100 OHM, 0.01%, ROHS |
| 中文描述： | 2K X 16 DUAL-PORT SRAM, 45 ns, PQFP100 |
| 封装： | TQFP-100 |
| 文件页数： | 12/16页 |
| 文件大小： | 140K |
| 代理商： | IDT7133LA45PF |
6.42
IDT7133SA/LA, IDT7143SA/LA
High-Speed 2K x 16 Dual-Port RAM Military, Industrial and Commercial Temperature Ranges
2746 drw 11
t
DW
t
APS
ADDR
"A"
t
WC
MATCH
t
WP
R/
W
"A"
DATA
IN"A"
ADDR
"B"
t
DH
VALID
(1)
MATCH
BUSY
"B"
t
BDA
VALID
t
BDD
t
DDD
(4)
t
WDD
DATA
OUT "B"
$858*;;,--
BUSY
!
$858*
BUSY
!
NOTES:
1. t
WH
must be met for both
BUSY
input (IDT7143, slave) and output (IDT7133, master).
2.
BUSY
is asserted on port "B" blocking R/
W
"B"
, until
BUSY
"B"
goes HIGH.
3. All timng is the same for left and right ports. Port "
A
" may be either left or right port. Port "
B
" is the opposite fromport "
A
".
NOTES:
1. To ensure that the earlier of the two ports wins, t
APS
is ignored for Slave (IDT7143).
2.
CE
L
=
CE
R
= V
IL
3.
OE
= V
IL
for the reading port.
4. All timng is the same for left and right ports. Port "A" may be either the left or right port. Port "B" is the port opposite fromport "A".
2746 drw 12
R/
W
"A"
BUSY
"B"
t
WP
t
WB
R/
W
"B"
t
WH(1)
(2)
,
相关PDF资料 |
PDF描述 |
|---|---|
| IDT7143LA45PF | HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS |
| IDT7133SA45PFB | HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS |
| IDT7143SA45PFB | HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS |
| IDT7133LA45PFB | HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS |
| IDT7143LA45PFB | HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT7133LA55FB | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 32KBIT 55NS 68FPACK |
| IDT7133LA55G | 功能描述:IC SRAM 32KBIT 55NS 68PGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT7133LA55GB | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 32KBIT 55NS 68PGA |
| IDT7133LA55J | 功能描述:IC SRAM 32KBIT 55NS 68PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:71V67703S75PFGI |
| IDT7133LA55J8 | 功能描述:IC SRAM 32KBIT 55NS 68PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:71V67703S75PFGI |
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