参数资料
型号: IDT71342SA20PF
厂商: IDT, Integrated Device Technology Inc
文件页数: 9/14页
文件大小: 0K
描述: IC SRAM 32KBIT 20NS 64TQFP
标准包装: 45
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,异步
存储容量: 32K (4K x 8)
速度: 20ns
接口: 并联
电源电压: 4.5 V ~ 5.5 V
工作温度: 0°C ~ 70°C
封装/外壳: 64-LQFP
供应商设备封装: 64-TQFP(14x14)
包装: 托盘
其它名称: 71342SA20PF
IDT71342SA/LA
High-Speed 4K x 8 Dual-Port Static RAM with Semaphore
Industrial and Commercial Temperature Ranges
TIMING WAVEFORM OF WRITE CYCLE NO. 1, R/ W CONTROLLED TIMING (1,5,8)
t WC
ADDRESS
t AS (6)
OE
CE or SEM
(9)
t AW
t WR
(3)
R/ W
t WP (2)
t HZ
(7)
DATA OUT
t LZ
t WZ (7)
(4)
t DW
t OW
t DH
(4)
t HZ (7)
DATA IN
2721 drw 10
Timing Waveform of Write Cycle No. 2, CE Controlled Timing (1, 5)
t WC
ADDRESS
t AW
CE or SEM
(9)
t AS
(6)
t EW
(2)
t WR
(3)
R/ W
t DW
t DH
DATA IN
2721 drw 11
NOTES:
1. R/ W or CE must be HIGH during all address transitions.
2. A write occurs during the overlap (t EW or t WP ) of either CE or SEM = V IL and R/ W = V IL .
3. t WR is measured from the earlier of CE or R/ W going HIGH to the end-of-write cycle.
4. During this period, the I/O pins are in the output state, and input signals must not be applied.
5. If the CE LOW transition occurs simultaneously with or after the R/ W LOW transition, the outputs remain in the High-impedance state.
6. Timing depends on which enable signal ( CE or R/ W ) is asserted last.
7. This parameter is guaranteed by device characterization, but is not production tested. Transition is measured 0mV from steady state with the Output Test Load
(Figure 2).
8. If OE is LOW during a R/ W controlled write cycle, the write pulse width must be the larger of t WP or (t WZ + t DW ) to allow the I/O drivers to turn off data to be placed on the bus
for the required t DW . If OE is HIGH during an R/ W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified t WP .
9. To access SRAM, CE =V IL and SEM = V IH . To access semaphore, CE = V IH and SEM = V IL . Either condition must be valid for the entire t EW time.
9
6.42
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