参数资料
型号: IDT7134SA70P
厂商: IDT, Integrated Device Technology Inc
文件页数: 6/12页
文件大小: 0K
描述: IC SRAM 32KBIT 70NS 48DIP
标准包装: 7
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,异步
存储容量: 32K (4K x 8)
速度: 70ns
接口: 并联
电源电压: 4.5 V ~ 5.5 V
工作温度: 0°C ~ 70°C
封装/外壳: 48-DIP(0.600",15.24mm)
供应商设备封装: 48-PDIP
包装: 管件
其它名称: 7134SA70P
IDT7134SA/LA
High-Speed 4K x 8 Dual-Port Static SRAM
Military, Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage (3)
7134X20
Com'l Only
7134X25
Com'l & Ind
7134X35
Com'l
& Military
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
READ CYCLE
t RC
t AA
t ACE
t AOE
t OH
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Output Hold from Address Change
20
____
____
____
0
____
20
20
15
____
25
____
____
____
0
____
25
25
15
____
35
____
____
____
0
____
35
35
20
____
ns
ns
ns
ns
ns
t LZ
Output Low-Z Time
(1,2)
0
____
0
____
0
____
ns
t HZ
Output High-Z Time (1,2)
____
15
____
15
____
20
ns
t PU
Chip Enable to Power Up Time
(2)
0
____
0
____
0
____
ns
t PD
Chip Disable to Power Down Time
(2)
____
20
____
25
____
35
ns
2720 tbl 09a
7134X45
Com'l &
Military
7134X55
Com'l, Ind
& Military
7134X70
Com'l &
Military
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
READ CYCLE
t RC
t AA
t ACE
t AOE
t OH
t LZ
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Output Hold from Address Change
Output Low-Z Time (1,2)
45
____
____
____
0
5
____
45
45
25
____
____
55
____
____
____
0
5
____
55
55
30
____
____
70
____
____
____
0
5
____
70
70
40
____
____
ns
ns
ns
ns
ns
ns
t HZ
Output High-Z Time
(1,2)
____
20
____
25
____
30
ns
t PU
Chip Enable to Power Up Time
(2)
0
____
0
____
0
____
ns
t PD
Chip Disable to Power Down Time
(2)
____
45
____
50
____
50
ns
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. 'X' in part number indicates power rating (SA or LA).
6
2720 tbl 09b
相关PDF资料
PDF描述
ABB75DHAN CONN EDGECARD 150PS R/A .050 SLD
ABB75DHAD CONN EDGECARD 150PS R/A .050 SLD
ASC49DRAS-S734 CONN EDGECARD 98POS .100 R/A PCB
IDT7134SA55P IC SRAM 32KBIT 55NS 48DIP
AMC44DRXI CONN EDGECARD 88POS .100 DIP SLD
相关代理商/技术参数
参数描述
IDT714016SA10BF 制造商:Integrated Device Technology Inc 功能描述:
IDT7140LA100C 功能描述:IC SRAM 8KBIT 100NS 48DIP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT7140LA100CB 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 32KBIT 100NS SB48
IDT7140LA100J 功能描述:IC SRAM 8KBIT 100NS 52PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:MoBL® 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并联 电源电压:2.2 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-VFBGA 供应商设备封装:48-VFBGA(6x8) 包装:带卷 (TR)
IDT7140LA100J8 功能描述:IC SRAM 8KBIT 100NS 52PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:MoBL® 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并联 电源电压:2.2 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-VFBGA 供应商设备封装:48-VFBGA(6x8) 包装:带卷 (TR)