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| 型号： | IDT7140SA25PF8 |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 19/21页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 8KBIT 25NS 64TQFP |
| 标准包装： | 750 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 8K (1K x 8) |
| 速度： | 25ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 64-LQFP |
| 供应商设备封装： | 64-TQFP（14x14） |
| 包装： | 带卷 (TR) |
| 其它名称： | 7140SA25PF8 |
IDT7130SA/LA and IDT7140SA/LA
High-Speed 1K x 8 Dual-Port Static SRAM
Functional Description
The IDT7130/IDT7140 provides two ports with separate control,
address and I/O pins that permit independent access for reads or
writes to any location in memory. The IDT7130/IDT7140 has an
automatic power down feature controlled by CE . The CE controls on-
chip power down circuitry that permits the respective port to go into a
standby mode when not selected ( CE = V IH ). When a port is enabled,
access to the entire memory array is permitted.
Interrupts
If the user chooses the interrupt function, a memory location (mail
box or message center) is assigned to each port. The left port interrupt
flag ( INT L ) is asserted when the right port writes to memory location
3FE (HEX), where a write is defined as the CE R = R/ W R = V IL per Truth
Table II. The left port clears the interrupt by accessing address location
3FE when CE L = OE L = V IL, R/ W is a "don't care". Likewise, the right port
Military, Industrial and Commercial Temperature Ranges
RAMs are being expanded in depth, then the BUSY indication for the
resulting array does not require the use of an external AND gate.
Width Expansion with Busy Logic
Master/Slave Arrays
When expanding an RAM array in width while using busy logic, one
master part is used to decide which side of the RAM array will receive
a busy indication, and to output that indication. Any number of slaves
to be addressed in the same address range as the master, use the
busy signal as a write inhibit signal. Thus on the IDT7130/IDT7140
RAMs the BUSY pin is an output if the part is Master (IDT7130), and
the BUSY pin is an input if the part is a Slave (IDT7140) as shown in
Figure 3.
interrupt flag ( INT R ) is asserted when the left port writes to memory location
3FF (HEX) and to clear the interrupt flag ( INT R ), the right port must access
the memory location 3FF. The message (8 bits) at 3FE or 3FF is user-
defined, since it is an addressable SRAM location. If the interrupt function
5V
270 ?
MASTER
Dual Port
RAM
BUSY L
CE
BUSY R
SLAVE
Dual Port
RAM
BUSY L
CE
BUSY R
5V
270 ?
is not used, address locations 3FE and 3FF are not used as mail boxes,
but as part of the random access memory. Refer to Truth Table II for the
interrupt operation.
MASTER
Dual Port
RAM
BUSY L
CE
BUSY R
SLAVE
Dual Port
RAM
BUSY L
CE
BUSY R
Busy Logic
Busy Logic provides a hardware indication that both ports of the
RAM have accessed the same location at the same time. It also allows
one of the two accesses to proceed and signals the other side that the
RAM is “Busy”. The BUSY pin can then be used to stall the access until
the operation on the other side is completed. If a write operation has
been attempted from the side that receives a BUSY indication, the
write signal is gated internally to prevent the write from proceeding.
The use of BUSY logic is not required or desirable for all applica-
tions. In some cases it may be useful to logically OR the BUSY outputs
together and use any BUSY indication as an interrupt source to flag the
event of an illegal or illogical operation. In slave mode the BUSY pin
operates solely as a write inhibit input pin. Normal operation can be
programmed by tying the BUSY pins HIGH. If desired, unintended
write operations can be prevented to a port by tying the BUSY pin for
that port LOW.
The BUSY outputs on the IDT7130 RAM (Master) are open drain
type outputs and require open drain resistors to operate. If these
19
BUSY R
BUSY L
2689 drw 18
Figure 3. Busy and chip enable routing for both width and depth
expansion with IDT7130 (Master) and IDT7140 (Slave)RAMs.
If two or more master parts were used when expanding in width,
a split decision could result with one master indicating busy on one side
of the array and another master indicating busy on one other side of
the array. This would inhibit the write operations from one port for part
of a word and inhibit the write operations from the other port for the
other part of the word.
The BUSY arbitration, on a Master, is based on the chip enable and
address signals only. It ignores whether an access is a read or write.
In a master/slave array, both address and chip enable must be valid
long enough for a BUSY flag to be output from the master before the
actual write pulse can be initiated with either the R/ W signal or the byte
enables. Failure to observe this timing can result in a glitched internal
write inhibit signal and corrupted data in the slave.
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| IDT7140SA35CB | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 8KBIT 35NS SB48 |
| IDT7140SA35J | 功能描述:IC SRAM 8KBIT 35NS 52PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:MoBL® 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并联 电源电压:2.2 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-VFBGA 供应商设备封装:48-VFBGA（6x8） 包装:带卷 (TR) |
| IDT7140SA35J8 | 功能描述:IC SRAM 8KBIT 35NS 52PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:MoBL® 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并联 电源电压:2.2 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-VFBGA 供应商设备封装:48-VFBGA（6x8） 包装:带卷 (TR) |
| IDT7140SA35JI | 功能描述:IC SRAM 8KBIT 35NS 52PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:MoBL® 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并联 电源电压:2.2 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-VFBGA 供应商设备封装:48-VFBGA（6x8） 包装:带卷 (TR) |
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